In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS 2(1 x ) ...
Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2. Annalen der Physik, 526(9-10):L7-L12, 2014.L. Wang, A. Kutana, and B. I. Yakobson, "Many-body and spin-orbit effects on direct- indirect band gap transition of strained ...
2H-WS2 is a semiconductor with an indirect band gap of ~1.3 eV. Monolayer 2H-WS2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Disulfide belongs to the group-VI transition metal dichalcogenides (TMDC...
WS2 Band Gap Monolayer tungsten disulfide has a direct band gap of 2.1 eV. This differs from bulk WS2 as mentioned above that has an indirect band gap of 1.2 eV. The direct band gap allows for more efficient light absorption and emission, falling within the visible range of the electromagnet...
Stable, fast UV-vis-NIR photodetector with excellent responsivity, detectivity, and sensitivity based on α-In2Te3 films with a direct bandgap. ACS Appl Mater Interfaces, 2016, 8: 20872–20879 71 Zhu X, Lin F, Zhang Z, et al. Enhancing performance of a GaAs/ AlGaAs/GaAs nanowire ...
Like MoS2, our experiment demon- strates that WS2 exhibits saturable absorption property at 1.55 mm, in which the energy per photon (0.8 ev) is lower than the direct bandgap of monolayer WS2 (2 ev)45 or indirect gap of the bulk WS2 (1.34 ev)46. Until now the nonlinear saturable ...
The bulk WS2 is an indirect band gap with the value of about 1.40 eV. However, the indirect band gap can be converted into the direct band gap of about 2.00 eV after it is separated into single-layer nanosheets [30]. Therefore, the stripped WS2 nanosheets have significantly improved ...
GaN interacts with WS 2 or WSe 2 via van der Waals interaction and all the most stable configurations of these two nanocomposites exhibit direct band gap characteristics. Meanwhile, the type-II heterojunctions are formed because the conduction band minimums and valence band maximums are respectively...
(WS2) is special in many respects. It has the largest direct band gap of about 2.1 eV at theKandK′points in the Brillouin zone4,5,20, resulting in the highest quantum efficiency of photoluminescence yield4,5,21. Furthermore, it exhibits sufficiently large exciton binding energy in ...
S. Wee2 Atomically thin tungsten disulfide (WS2) has attracted much attention in recent years due its indirect- to-direct band gap transition, band gap tunability, and giant spin splitting. However, the fabrication of atomically thin WS2 remains largely underdeveloped in comparison to its ...