Spatially resolved Raman spectroscopy reveals a continuous change of the silicon Raman peak position and peak width along the nanotip that is attributed to a smooth change between bulk properties at the base to size-induced phonon confinement in the apex of the nanotip. This approach allows to ...
355 nm laser wavelength, and optimum substrate temperature of 200 °C. Several distinct peaks (775.9, 1141.9, and 1440.9) can be seen in the typical Raman spectra of GaN. The E2 (high) mode is the dominant peak because it is associated with the motion of nitrogen...
However, a further dominant feature is represented by an exceptionally strong first-order Si Raman peak at 500.7 nm (~520 cm−1 of Raman shift). To reveal the nature of this intense Raman signal, we excited the samples 1 and 2 at different laser wavelengths and compared the spectra...
The Raman spectra of epitaxial silicon layers on sapphire substrates, as well as polycrystalline silicon on vitreous quartz, have been measured after various treatments. In silicon on sapphire layers, grown epitaxially near 1000°C, the Raman peak is broadened and shifted to higher energy compared ...
The sample also showed photoluminescence (PL) peak in the visible spectral range. The change in the intensity, width and the position of the PL peak showed strong sensitivity to the influence of different environment conditions such as air, vacuum and acetone....
The residual stress in silicon substrates after thermal oxidation was discussed experimentally. Microscopic Raman spectroscopy was used for the stress measurement. It was confirmed that the peak position of the Raman spectra shifted linearly with existing stress. The Ar+ laser beam of 1μm diameter ...
When a uniaxial stress is applied, Raman peaks exhibit splitting and shifts which are linear to the applied stresses [2]. The proportionality constants of Raman peak shifts to hydrostatic stress components, are defined by:γ0=−∂lnW0∂lnVwhere γ0 is the Gruneisen parameter, W0 is ...
The Raman measurement was carried out with a 325-nm laser and performed on the p-a-Si:H or p-nc-Si:H layer deposited on a planar i-a-Si:H–glass substrate. The deposition process was identical to that of the fabrication procedure for solar cells. The Raman spectra were fitted with ...
Silicon particles with sizes ranging from micrometer to nanometer were prepared by milling, oxidization and etching. The Raman peak is almost unshifted for the oxidized nanocrystals with respect to its bulk value owing to the compensation of phonon confinement affected by the confined volume and st...
The Raman spectrum of R-Si reveals three peaks at 290, 503, and 913 cm−1, which are indexed to crystalline silicon. The intense peak at 501 cm−1 is related to the transverse optical mode of silicon nanoparticles23,27. Amorphous Si-O-Si and Si-O bonds are broken to form ...