Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence)...
The film by rf-sputtering shows Raman spectrum corresponds to significantly random amorphous silicon oxide structure. The film by evaporation employing resistive heating exhibits Raman spectrum that has been explained by silicon-oxygen ring structure. 展开 ...
Raman spectroscopy is being utilized to characterize porous silicon (PS) structures, not only for optoelectronic but also for sensing applications like SERS and biomedical uses. This review focuses on the large body of work extracting nanocrystallite size distibutions from Raman signals. Raman scatteri...
This means that an average indicator of oxide quality such as the peak wave number of the infrared absorption spectrum is insufficient to describe the structural change inside the thermally grown SiO films. A possible model for the asymmetric broadening of the Si O Si bond angle distribution is ...
A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.收藏...
N-type microcrystalline silicon oxide thin films (n-μc-SiOx:H) have been deposited by VHF-PECVD (40 MHz) with reactant gas mixtures of CO2/SiH4 and H2. N-μc-SiOx thin films exhibiting low refractive ...
The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature ...
Raman spectrum of prepared GaN on PSi nano-structure using PLD method under 900 mJ laser energy, 355 nm laser wavelength, and optimum substrate temperature of 300 °C. Full size image Spectroscopic properties PL of PSi substrate The photoluminescence (PL) spectra of the PSi substrate are presente...
Fig. 2. The process flow of a heterogeneous silicon/InP laser waveguide: (A) shows the processed SOI waveguide, (B) is after the bonding and removal of the InP substrate, (C) is after the III–V mesa etch, (D) shows the bottom n-metal contact and via oxide formation, and (E) sh...
Typical silicon-on-insulator (SOI) waveguides can operate in the 1.1–4 μm wavelength range, limited by the silicon band edge at short wavelengths and by the oxide absorption at long wavelengths. The incorporation of additional complementary metal-oxide-superconductor (CMOS)-compatible materials...