Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence)...
Photoluminescence (PL) and Raman spectra of silicon oxide films enriched by Si or Ge have been investigated before and after thermal annealing at 1150°C and 800°C, respectively. The dependences of PL peculiarities on the concentration of Si and Ge, as well as on the existence (or absence)...
performance measurements were conducted at a fixed voltage window between 0.01 V and 2.0 V (vs. Li+/Li). Silicon oxide materials have been previously proven to be electrochemically active based on following reactionsEq. 1–322,23. Fig. 4aandFig. S1show the 2nd cycle cyclic voltammogram ...
In the absence of stress, the first-order [93] Raman spectrum of Si-I exhibits a single line at 520 cm−1 [94], which corresponds to the light scattered by a triply degenerate optical phonon in the center of the Brillouin zone (Fig. 12b). Finite size of the crystalline grains (i...
2–4). The Raman spectrum (Fig. 2g) of SF@G displays an intense peak at 517 cm−1 with a shoulder at a lower frequency, confirming the intact nanoplates upon the CVD process27. Furthermore, the ratio of the D band to G band is estimated to be around 1.5, revealing the ...
However, the intrinsic indirect bandgap (1.12 eV), limits its usage in optoelectronics devices due to the passage of the infrared spectrum. Herein, we have structurally modified the Si structure into a nanostructured material like porous silicon (PS) for application in optoelectronic devices. In ...
[10] A. Liu et al., “A high speed silicon optical modulator based on a metal–oxide semiconductor capacitor”, Nature 427, 615 (2004); https://doi.org/10.1038/nature02310cited by [11] O. Boyraz and B. Jalali, “Demonstration of a silicon Raman laser”, Opt. Express 12 (21), 526...
The crystallization of Si-QDs was investigated by Raman scattering spectroscopy. The Raman spectra of the Si-QDSLs with the CO2/MMS flow rate ratios of 0, 0.3, 1.5, and 3.0 are shown in Figure3. A Raman spectrum was separated into three Gaussian curves. The peaks at approximately 430 and...
and each of the first and second peak integrated intensities is defined as a product of peal width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that ...
A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the