However, at NIR wavelengths, typically only the top oxide layer is removed in this zone35. In contrast, MIR wavelengths show removal of both the oxide layer and some underlying material. Both the cross-sectional TEM (Fig. 3) and the \(\mu \)-Raman mapping (Fig. 4) show a transition ...
The first-order Raman peaks of the SiNWs were found to shift and to broaden asymmetrically in comparison to the c-Si Raman peak. Using a phonon confinement model, the average diameter of the wires can be estimated from the Raman spectra but are consistently lower than the diameters measured ...
In contrast, Raman peak shifts for oxide-embedded nanocrystals were significantly less pronounced as a result of the stress induced by the matrix. 展开 关键词: surface enhanced Raman scattering plasmonics nano-optics spectroscopy DOI: 10.1021/jz300309n 被引量: 42 ...
Ge nanocrystals (nc-Ge) embedded in silicon oxide films were synthesized using RF magnetron sputtering and post-annealing procedure. To minimize the stress effect and inhomogeneity, we intentionally lower the cooling rates and reduce the temperature gradient during annealing. Significant Raman shifts rang...
The more broadening of epi Si peak may be due to the small portion of amorphous Si peak. Generally, the FWHM of crystal Si Raman peak is known to be about 3 cm−1. However, the FWHM of bare Si Raman peak measured by 325 nm laser has wide value because the intensity of Raman...
and each of the first and second peak integrated intensities is defined as a product of peal width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that ...
The intensity of the 0.790 eV PL peak (C﹍ine) due to the complex formed by electron irradiation can be used to measure the lowest levels of 10 14 to 1O 15 atom/cm 3 of carbon, almost independently of oxygen concentration. The intensity of the 0.969 eV peak (G﹍ine) due to the ...
Besides, the principle of the potentiometric transduction is based on the presence of silicon oxide at the solid/liquid interface. Indeed, in oxidised samples the porous silicon surface is covered by a silica layer which is in direct contact with the electrolyte solution. The silica...
Elemental silicon and its oxide, silica (SiO2), are widely studied building blocks of the world around us1: from minerals in geology to silicon-based computing architectures; thin-film solar cells in which amorphous silicon is the active material2; or zeolite catalysts based on the SiO2 parent...
the highly dense and well-aligned nanowires could be further extended to a 37 µm height (Fig.1g). These SiNWs can be dispersed in solvents such as ethanol, and isolated nanowires can be obtained through a simple sonication (Supplementary Fig.2). Figure1hillustrates the oxide-induced CVE...