and R. Spolenak, Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon. J. Raman Spectrosc., 2009. 40: p. 679.Thomas Wermelinger, Ralph Spolenak. Correlating Raman peak shifts with phase transformation and defect densities: ...
6a. In the first 4 h, the intensity of silicon Raman peak stays comparatively high, but an apparent decrease was followed when lithiated gradually, which is consistent with the electrochemical reaction of silicon anodes. The lithiation of silicon initiates at about 4 h, the outer layer of ...
Besides, the principle of the potentiometric transduction is based on the presence of silicon oxide at the solid/liquid interface. Indeed, in oxidised samples the porous silicon surface is covered by a silica layer which is in direct contact with the electrolyte solution. The silica ...
The more broadening of epi Si peak may be due to the small portion of amorphous Si peak. Generally, the FWHM of crystal Si Raman peak is known to be about 3 cm−1. However, the FWHM of bare Si Raman peak measured by 325 nm laser has wide value because the intensity of Raman...
(Supplementary Figs.2–4). The Raman spectrum (Fig.2g) of SF@G displays an intense peak at 517 cm−1with a shoulder at a lower frequency, confirming the intact nanoplates upon the CVD process27. Furthermore, the ratio of the D band to G band is estimated to be around 1.5, ...
Meanwhile, the intensity of the Raman peaks of the electrolyte remains almost invariant, which indicates that this change of silicon Raman peak is related to the electrochemical reaction. It can be seen from Fig. 6b–d that the peak position (Xc), full-width at half-maximum (FWHM) of the...
Si/SiO2interfaces are ubiquitous in semiconductor manufacturing, which includes metal-oxide-semiconductor field-effect transistors1, nanowire- and nanodot-transistors. The formation of SiO2layers involves charge transfer during the oxidation of Si substrates2. Additionally, siliceous materials-including clay ...
the highly dense and well-aligned nanowires could be further extended to a 37 µm height (Fig.1g). These SiNWs can be dispersed in solvents such as ethanol, and isolated nanowires can be obtained through a simple sonication (Supplementary Fig.2). Figure1hillustrates the oxide-induced CVE...
The stress increased with lowering oxidation temperature and thickening oxide film. However, complicated stress change occurred in the silicon substrate after the local thermal oxidation. The stress change was explained considering the curvature change of the Si/SiO2 interface during the local thermal ...
and each of the first and second peak integrated intensities is defined as a product of peal width at half height and a peak height of a Raman spectrum obtained by a Raman scattering spectroscopic analysis of the silicon oxide film. The silicon oxide film is deposited under a condition that ...