Spatially resolved Raman spectroscopy reveals a continuous change of the silicon Raman peak position and peak width along the nanotip that is attributed to a smooth change between bulk properties at the base to size-induced phonon confinement in the apex of the nanotip. This approach allows to ...
where \(\triangle {\rm{\omega }}\) is the change in the Raman peak position, and the positive value \({\rm{\tau }}\) corresponds to tensile stress. Thus, the peak position reflects the tensile stress on the epi Si film, which might arise due to lattice mismatch or thermal expansion...
Exposing IPS to air for more than 4 months resulted in no degradation of PL intensity or changes in the peak position and size distribution. Raman spectra of IPS also revealed changes in line-shape asymmetry in comparison to freshly prepared non-passivated PS samples. The data were explained ...
The residual stress in silicon substrates after thermal oxidation was discussed experimentally. Microscopic Raman spectroscopy was used for the stress measurement. It was confirmed that the peak position of the Raman spectra shifted linearly with existing stress. The Ar+ laser beam of 1μm diameter ...
a, Peak position of photoluminescence (PL) measurement, b, Full width at half maximum (FWHM) of PL measurement, c, Integrated PL intensity. The gaussian fitting does not apply to this figure. d, Intensity of Raman A1g peak. e, FWHM of Raman \({\mathrm{E}}_{2{\mathrm{g}}}^1\)...
The spectral characteristics of the first order Raman scattering (line shape, bandwidth and peak position) were analyzed according to the spatial correlation model in order to estimate the effects of phonon confinement and evaluate the stress. A compressive stress, attributed to the lattice mismatch ...
One can clearly see that only DNDs-TPS has a distinct peak centered at 738 nm. This peak position has an agreement with the well-known wavelength of ZPL for the SiV center, suggesting that SiV-center containing single-digit NDs were successfully synthesized via the detonation process using the...
PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. 展开 关键词: A. Thin film B. Vapour deposition C. Infrared spectroscopy D. Luminescence ...
Zhitang Song2 & Junhao Chu1 The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210–620 K) and Si concentration (0–33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ell...
The field plots framed in red and blue dash lines correspond to the transmission peak (b) and dip (c) highlighted with red and blue arrows, respectively, in (e). The orange solid lines and arrows show the position of the light source in the simulation. (d) Transmittance map plot of a...