Spatially resolved Raman spectroscopy reveals a continuous change of the silicon Raman peak position and peak width along the nanotip that is attributed to a smooth change between bulk properties at the base to size-induced phonon confinement in the apex of the nanotip. This approach allows to ...
where \(\triangle {\rm{\omega }}\) is the change in the Raman peak position, and the positive value \({\rm{\tau }}\) corresponds to tensile stress. Thus, the peak position reflects the tensile stress on the epi Si film, which might arise due to lattice mismatch or thermal expansion...
Meanwhile, the intensity of the Raman peaks of the electrolyte remains almost invariant, which indicates that this change of silicon Raman peak is related to the electrochemical reaction. It can be seen from Fig. 6b–d that the peak position (Xc), full-width at half-maximum (FWHM) of the...
where Δω is the Raman peak position shift between unprocessed c-Si donor substrate and free-standing spalled Si (Farrukh, 2012). Secondary ion mass spectrometry (SIMS, IMS 7f, CAMECA, France) was used to investigate the diffused metal impurities at the surface of free-standing spalled Si ...
rule is relaxed, and the phonon scattering is not limited to the center of the Brillouin zone, while phonon dispersion near the center will also be considered56. The smaller the crystal size is, the bigger the wavenumber downshifts, and the more asymmetric and broader the Raman peak becomes53...
The residual stress in silicon substrates after thermal oxidation was discussed experimentally. Microscopic Raman spectroscopy was used for the stress measurement. It was confirmed that the peak position of the Raman spectra shifted linearly with existing stress. The Ar+ laser beam of 1μm diameter ...
Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits Local mechanical stress is currently an important topic of concern in microelectronics processing. A technique that has become increasingly popular for loc... ID Wolf - 《Semiconductor Science & Technology》 被引量...
The Raman scattering refers to the inelastic scattering of a photon. When incident light with wavelengthωpis absorbed by an atom or molecule, the system is excited to a higher state. In most cases, the energy is quickly released by scattering a photon with same energy and wavelength as the...
Meanwhile, the intensity of the Raman peaks of the electrolyte remains almost invariant, which indicates that this change of silicon Raman peak is related to the electrochemical reaction. It can be seen from Fig. 6b–d that the peak position (Xc), full-width at half-maximum (FWHM) of the...
As a result, the Raman spectrum of nanocrystalline Si-I has a characteristic 2TA(X) overtone peak (at ∼300 cm−1) of an enhanced intensity as compared to the bulk silicon (Fig. 12a). Another consequence of the quantum confinement is the distorted shape of the major Si-I band. ...