Raman scattering is frequently used to prove the presence of Si nanocrystals. However, to our knowledge, there are only a few reports for the Raman measurement of the silicon ion implanted SiO_2 layer[1,2]. The difficulty is that the strong Raman peak from the crystalline Si substrate ...
摘要: Studies photoluminescence and Raman spectra of silicon nanocrystals prepared by Si ion implantation into SiO2 layers on Si substrate at room temperature. Dependence on annealing temperature; Characterized Raman scattering peak of silicon nanocrystals....
The spectral feature at ~300 cm−1 is a second- order Raman peak of silicon56. interaction strength data that we acquire of in tAhFeMsilimcoenasAuFreMmteinptws (iSthupthpeleemxfeonlitaatreydFfilgak. Ses2)anudnatmhebSigiOuo2 ususlbysstrhaotwe, respectively. Phase lag that significant ...
10、400-200-0-520:Silicon Raman Peaktensile compressive-10001002003004005006007008009001000 1100Raman Shift (cm1)-100高稳定性、高重复性硅器件应力测量Width/cm-1 (HWHM)2.802.702.602.500 10 20 30 40 50pm1 s exposure per spectrum(51x5 仁2601 spectra)Positi on /cnr1n-523.5I10 20 30 40 50 pm522...
多孔硅激光功率样品温度拉曼光谱法温度升高硅样品多孔计算激发光源Raman spectra of porous silicon are obtained using 457.5nm laser line, from which some relations between peak parameters and laser powers are obtained. Our previous theoretical research demonstrated that the increase of laser power leads to ...
Raman scattering of layer-type compound 2H-WS 2 has been studied at room temperature. The first-order Raman peaks are observed at 27.4, 357 and 423 cm -1. The low-frequency peak at 27.4 cm -1 is a rigid-layer mode, from which the interlayer shear force constant is estimated. The cent...
Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned vertical SiNWs. Raman shift and size relation from bond-...
reported Raman studies of individual SWNTs deposited on a silicon substrate that were placed under strain bymanipulating the nanotubes with an AFM tip (pushing the central part of the nanotube across the substrate) and studying the Raman spectra before and after manipulation. They observed ...
www.nature.com/scientificreports OPEN Surface-Enhanced Raman Scattering of Silicon Nanocrystals in a Silica Film received: 03 February 2016 accepted: 11 May 2016 Published: 03 June 2016 Sergei Novikov1 & Leonid Khriachtchev2 Surface-enhanced Raman scattering (SERS) is an intriguing effect, ...
Raman scattering of Ge nanocrystallites from 4 to 16nm in size, embedded in SiO 2 thin films has been studied.The Ge SiO 2 samples were prepared by ion beam sputtering and a post annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge pa...