Patterned silicon nitrideGrapheneSurface morphologySurface roughnessRaman scatteringTensile strainGraphene is widely used for nano-devices due to its distinctive band structure and fascinating properties. The substrates could significantly affect the properties of graphene and related devices. In this work, we...
For the 5-min-etched Si nanowire sample, the Raman peak shows a decrease from 520.6 to 519.3 cm−1 when the Raman shift has been measured from top and sidewalls, respectively. A similar trend occurs in the 10-min-etched Si nanowire sample, where the Raman measurements from the...
The more broadening of epi Si peak may be due to the small portion of amorphous Si peak. Generally, the FWHM of crystal Si Raman peak is known to be about 3 cm−1. However, the FWHM of bare Si Raman peak measured by 325 nm laser has wide value because the intensity of Raman...
In contrast, Raman peak shifts for oxide-embedded nanocrystals were significantly less pronounced as a result of the stress induced by the matrix. 展开 关键词: surface enhanced Raman scattering plasmonics nano-optics spectroscopy DOI: 10.1021/jz300309n 被引量: 42 ...
The first one was an EISCAP (electrolyte–insulator–semiconductor capacitor) sensor built depositing silicon nitride on p-type Si substrate and used for potentiometric transduction, while the second was a Si-based micromechanical sensor whose detection method is based on the measurement...
Raman spectra would suggest that diamond grown on oxygen plasma treated silicon nitride incorporates fewer sp2sites compared to that of other treatments, indicating a more structurally ordered film. Certainly, when compared to the diamond peak at 1285 cm−1, diamond grown on RCA-1 cleaned ...
and pull-in cuts on the top side and membrane windows on the bottom side, (iii) electron beam lithography, aluminum deposition and lift-off steps to pattern the microwave circuit and (iv) final release of the nitride membrane using a silicon-enriched tetramethylammonium hydroxide (TMAH) solution...
The effect of nitrogen flow on SiNx:H films has been verified using Raman analysis studies. Fourier transform Infrared spectroscopy analysis has been carried out to identify all the possible modes of vibrations such as Si–N, Si–H, and N–H present in the films, and the effect of nitrogen...
This has been proven by Raman spectra and high-resolution transmission electron microscopy (HR-TEM). A sharp peak at a frequency of 515 cm ascribed to the transverse optical (TO) mode becomes broader and makes a symmetric shoulder on the higher frequency side with ...
The proposed method of combined nano-Raman spectroscopy and X-ray diffraction (XRD) allows quantitative analysis of Si in silicon nitride. Raman spectroscopy enables the determination of atomic bonds and rapid and easy identification of free silicon. Further analysis of the crystalline phases by XRD ...