The comparison of the mean Raman spectrum of worn and unworn (unused) cutting inserts showed that the intensities of the aluminum oxide and titanium nitride bands were decreased, whereas the titanium carbide band at 672 cm(-1) was increased, as a result of the wear effect. Moreover, the ...
a重卡顶盖中外板 In heavy card roof panel outside plank[translate] aRaman spectrum of a NCD film on a titanium nitride substrate and its deconvolution into four peaks as described in the text 一部NCD影片在钛氮化物基体和它的重叠合法的喇曼光谱到四个峰顶里如所描述在文本[translate]...
As to the Raman spectrum of TiN, it has been evidenced that the scattering in the acoustic range is mainly determined by the vibrations of the heavy metal (Ti) ion vacancies (typically 150–350 cm−1) and light element (N) ion vacancies (typically 400–650 cm−1)27. As shown ...
Influence of nitrogen vacancies on the N K-ELNES spectrum of titanium nitride 来自 mendeley.com 喜欢 0 阅读量: 28 作者:M Tsujimoto,H Kurata,T Nemoto,S Isoda,S Terada,K Kaji 摘要: We studied the influence of nitrogen vacancies on the nitrogen K-edge energy-loss near-edge-structure (ELNES...
Titanium nitride Ellipsometry Plasmonic material Sputtering Atomic layer deposition Optical characterization Thin film 1. Introduction Transition metal nitrides are alternative plasmonic materials with applications in nanophotonics, telecommunications, and electronics [1], [2], [3]. Such materials offer several...
(b) Measured optical spectrum of single-mode lasing at 848.7 nm and 858.3 nm, with a SMSR of 23.2 dB and 22.2 dB, respectively. (Inset) Image of the diode package used in these experiments. Supplementary information Supplementary Information This file contains Supplementary Sections 1–10, ...
The Raman spectrum of titanium tetraiodide has been recorded using nine excitation frequencies and the rotating sample technique. The spectrum is normal with 647.1 nm excitation, the relative intensities of the fundamentals being ν 1(a ... RJH Clark,PD Mitchell - 《Journal of the American Chemic...
We present a comparative study of the optical properties of 50 nm-thick titanium nitride (TiN) films deposited on a silicon substrate by pulsed-DC sputtering, thermal, and plasma-enhanced atomic layer deposition. Silicon was chosen as the optimal material for the complementary metal-oxide-semiconduc...
et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401 (2006). Article CAS ADS Google Scholar Ribeiro, H. B. et al. Unusual angular dependence of the Raman response in black phosphorus. ACS Nano 9, 4270–4276 (2015). Article CAS Google Scholar Lee, C...
Amorphous carbon nitride films have also been prepared on Ti alloys for improving the tribological property and biocompatibility of Ti alloys [,,]. However, the soft Ti alloys may not be able to provide adequate support for the hard DLC or CNX films, thereby adversely affecting their load ...