and the addition of the silicon nitride etching solution It is used as additive.The high purity silicic acid with low metal impurity content is a distillable silicon compound, such as silane tetrachloride, trichlorosilane, or alkoxysilanes such as tetramethylsilane and tetraethylsilane as raw material...
PECVD Nitride Lithium Niobate Polished silicon slab 1″&1.5″ Silicon Wafer 125mm Silicon Wafer 150mm&200mm Silicon Wafer 25.4 (1 inch) Silicon Wafers Porous Silicon Wafer Silicon Ingots -1 Silicon Ingots -2 Silicon Wafer Thickness:275+- 25µm Silicon Wafer Thickness:1000μm 2″ silicon waf...
fibre-optical telecommunications has been a driver of near-infrared photonic integrated circuits, such as integrated arrayed waveguide gratings that are primarily built in planar lightwave circuits17,18. These low absorption and high-quality waveguides enable very low loss, yet ...
Preliminary cleaning to remove surface contaminants uses dip etching in HF or a mixture of HCl, H2O2 and deionised water [Phelan & Powell Analyst 109 1299 1984]. Derivatives Precipitated silica is obtained like silica gel by acidifying an aqueous solution of sodium silicate. Precipitated silica is...
Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths. Opt. Express 21, 14036 (2013). Article Google Scholar Soref, R. The past, present, and future of silicon photonics. IEEE J. Sel. Top. Quantum Electron. 12, 1678–1687 (2006). Article ...
The method comprises the following steps: providing the monocrystalline silicon substrate; forming a first silicon dioxide layer, a silicon nitride layer and ... 范春晖,王全 被引量: 0发表: 2011年 Independent control of etching and passivation gas components for highly selective silicon oxide/silicon...
Using this process, silicon wafers are exposed to a solution of acidic chemicals that removes the oxide layers on the surface. This results in a thin layer of silicon nitride. The acid and water solutions are heated to an optimum temperature for the etching process. A high pH balance prevents...
they are difficult to be integrated with silicon nitride waveguides. So far, all-Si-based emitters working in the visible light spectrum, which can be integrated to silicon nitride-based circuits30, has not been realized. It should be noted that blackbody radiation in the visible to near infrar...
The pattern was transferred into the silicon layer by dry etching employing a reactive ion etcher (gas composition of SF6:CHF3 1:1.16). The silicon was shallow-etched to ensure ∼30 nm of silicon between the access waveguide and the optical cavity remained in order to ensure electrical ...
摘要: PURPOSE:To obtain a uniform mirror surface free from white clouding by etching Si semiconductors using an etching solution containing at least hydrofluoric acid (concentration 45-51%) and strong nitric acid of more than 70% in concentration....