Silicon nitrideBuffered hydrofluoric acidIn integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we ...
The first one was an EISCAP (electrolyte–insulator–semiconductor capacitor) sensor built depositing silicon nitride on p-type Si substrate and used for potentiometric transduction, while the second was a Si-based micromechanical sensor whose detection method is based on the measurement ...
Wet EtchingNano‐finsWe describe formation of silicon micro- and nano-fins, with (111)-plane sidewall facets, for selective sidewall epitaxy of III-Nitride semiconductors. The fins are produced by wet etching (110)-oriented silicon wafers. Silicon dioxide is deposited using plasma enhanced chemical...
where typically Bosch processes are used to achieve high etching selectivity. The characteristic of Bosch recipes is the existence of scallops on the structures’ sidewall [18]. This effect is avoided by using a continuous mode reactive ion etching (CM-RIE) recipe [11,19]. A known problem rel...
Three separate surface treatments were then performed on these samples including wet-chemical etching in hydrofluoric acid (HF), high-temperature nitrogen atmosphere annealing (NA), and high-temperature thermal oxidation (TO). HF etching of the tweariscesxiplieccate(SdiOto2m) paaxsismiviazteioth...
In some instances, wet etch has been slower to adapt single wafer processing because throughput is impacted. But several key processes in wet etching are now trending toward single wafer. The Nitride Etch process is a prime example for the following reasons: ...
The first etching process resulted in deep grooves, 36 μm on average, on the front of recycled wafers that rendered the process unsuitable for wafers to be used in solar cell production. Such grooves occurred due to different etching rates of Ag electrodes and silicon nitride (SiNx). On ...
35 hydrofluoric acid solutions,22–23 sulfuric acid/hydrogen peroxide mixtures,23–24 Wet-chemical cleaning processes,64 X X-ray fluorescence process,633 X-ray photoelectron spectroscopy (XPS),297,621,626,646–648 Y Yield,100–103 contamination classification based on,98–99 device yield,99...
In optimum conditions it is possible to achieve 0.1% uniformity over the wafer in wet etching, but in DRIE etching 1% uniformity is difficult to achieve with large-series production processes. Standard values are in the range of ±1% to ±2.5%, and in addition the etch rate depends on the...
Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate...