PURPOSE: To enlarge an etch selectivity between a silicon dioxide film, a base, and a silicon nitride film in a method for dry etching of the silicon nitride film which is often used as an insulating film in a semiconductor device.HIZUYA KENICHI日数谷 健一SAITO TSUTOMU齋藤 勉...
Dry etchingis the most important technique for patterning III-nitride devices. Generally F2and/or Cl2containing reactantgas mixturessuch as Cl2, BCl3, SiCl4, SiF4, CF4, SF6, CHF3, NF3, partly also in combination with H2and Ar are applied[102,103]. Dry etch processes based on HBr : H2...
A dry etching method for selectively etching a silicon nitride having the generic formula SixNy existing over a base of SiO2 utilizing, as the etchant gas, a mixture of a fluorohydrocarbon in which the atomic ratio of F/C is smaller than 3:1, the mixture containing 30-70% of CO2 on ...
PURPOSE:To prevent the surface of a semiconductor from being contaminated by the air during transportation by carrying in a vacuum the semiconductor whose surface is cleaned by dry etching the semiconductor was subjected to as a pretreatment into the other dry-etching chamber to etch the semiconducto...
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4,O2, and N2 has been investigated. A ... Kastenmeier,EE B. - 《Journal of Vacuum Science & Technology A》 被引量: 130发表: 1996年 Study of plasma - surface interactio...
A new generation of dry etching gas hexafluoro-1,3-butadiene C4F6, which can be used for etching of Silicon Dioxide (SiO2) and Silicon Nitride (Si3N4) and as an electronic specialty gas belongs to the electronics industry system. At present, the electronics industry has become the main pilla...
Selective Etching of Silicon Nitride Film on Single Crystalline Silicon Solar Cell Using Intensive Surface Discharge A new etching technique, which is useful for the formation of electrode grooves for finger and busber electrodes on solar cells, was examined using a surfa... T Sakoda,T Hamada,K...
solventforsilicon.Theconcentrationsofeachetchant determinestheetchrate.Silicondioxideorsiliconnitrideis usuallyusedasamaskingmaterialagainstHNA.Asthe reactiontakesplace,thematerialisremovedlaterallyata ratesimilartothespeedofetchingdownward. Thislateralanddownwardetchingprocesstakesplaceseven ...
PURPOSE:To carry out the high-selectivity dry etching of an oxide film on silicon at high etch rate, by performing the etching of an oxide film by using a gaseous mixture of CHF3, CH2F2, and O2 as an etching gas. CONSTITUTION:An etching gas is introduced into a reaction chamber and pla...
DRY ETCHING METHODThe present invention is a method for etching a multilayer laminated film containing at least one silicon oxide film layer and at least one silicon nitride film layer with use of an etching gas so that the layers are etched at the same time, said etching method being ...