In some instances, wet etch has been slower to adapt single wafer processing because throughput is impacted. But several key processes in wet etching are now trending toward single wafer. The Nitride Etch process is a prime example for the following reasons: ...
Silicon nitride filmDoped TMAH SolutionsPECVDSilicon-rich filmIt has been reported that the etch rate of exposed aluminum lines and pads on MEMS chips can be significantly reduced by dissolving an appropriate amount of silicon (or silicic acid, water glass) and ammonium persulfate (AP) in TMAH ...
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600 DEG C. The method additionally involves the maintenance of a relatively high ratio of nitrogen...
Silicon nitride film having a low wet etch rate This invention using high density plasma chemical vapor phase accumulation technology in the baseplate temperature which is lower than the 600 , low regards the method of accumulating the silicon nitride membrane of wet etching speed on ... ムンゲ...
In the first embodiment phosphoric solution is used both for main-etch and for over-etch. In the second embodiment, phosphoric solution is used for main-etch only, while the sulfuric+hydrogen peroxide solution is used as an over-etch in forming the tiny silicon nitride spacers of the ...
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Wet EtchingNano‐finsWe describe formation of silicon micro- and nano-fins, with (111)-plane sidewall facets, for selective sidewall epitaxy of III-Nitride semiconductors. The fins are produced by wet etching (110)-oriented silicon wafers. Silicon dioxide is deposited using plasma enhanced chemical...
The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiNx) films used for a variety of applications in device manufacturing. In many cases, a low temperature (x films that are etch res...
An improved silicon nitride etch bath system is provided. The improved etch bath system includes a silicon dioxide condensing system formed of a heat exchanger and a secondary filter. The heat exchanger is provided for removing a small portion of phosphoric acid from an etching bath and for cooli...
The first one was an EISCAP (electrolyte–insulator–semiconductor capacitor) sensor built depositing silicon nitride on p-type Si substrate and used for potentiometric transduction, while the second was a Si-based micromechanical sensor whose detection method is based on the measurement ...