A method of removing titanium nitride is described. The silicon nitride resides on a patterned substrate. The titanium nitride is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor, a nitrogen-and-hydrogen-containing precursor and an...
The invention provides a method for etching silicon nitride selective to titanium silicide and fabricating multi-level contact openings on a quartermicron device using a two step etch process. The pro
A titanium nitride layer (34,36,38) is formed over the titanium silicide (34) and on the surfaces of the insulation layer, including the top surface... S Somekh,J Nulman,M Chang 被引量: 0发表: 2000年 Formation of Titanium Silicide At Atmospheric Pressure It is shown if a silicon dioxi...
Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the ...
In this paper we present a photonic-circuit-integrated Ti:Sa laser that combines the Ti:Sa gain medium with a silicon-nitride-on-sapphire integrated photonics platform, resulting in high portability with minimal power consumption. We demonstrate Ti:Sa lasing from 730 nm to 830 nm by ...
PROBLEM TO BE SOLVED: To selectively etch a titanium-containing layer which is formed on a silicon substrate or a silicate glass substrate and mainly contains one or more substances selected from the group consisting of titanium, titanium oxides, titanium nitrides and titanium oxynitrides at a hig...
The extra titanium nitride layer makes it is possible to use a wet etch to remove the oxide cap, with the titanium nitride layer serving as a etch stop. In this manner an isotropic wet etch may be employed to remove all of the oxide cap layer. The isotropic wet etch is preferably a ...
(Ti3C2Tx) and titanium nitride (TiN), respectively. In the last section of this review, the role of titanium dioxide (TiO2) is demonstrated in the supercapacitors of TiO2-based, carbon/TiO2-based, metal/TiO2-based, and conducting polymer/TiO2nanocomposites. Many factors affect the ...
The micro-mirror 160 is exposed to a titanium-nitride etch process according to the teachings of the present invention through an opening 167 in the substrate 166 to remove the titanium-nitride layer 164. The resulting structure is illustrated in FIGS. 12A and 12B. A gap 168 formed by ...
Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in...