US5735993 Sep 6, 1996 Apr 7, 1998 Nec Corporation Plasma processing apparatus for dry etching of semiconductor wafersUS5735993 * 1996年9月6日 1998年4月7日 Nec Corporation Plasma processing apparatus for dry etching of semiconductor wafersUS5735993 * Sep 6, 1996 Apr 7, 1998 Nec Corporation ...
According to the invention, the selective etching of a first film is carried out according to the invention. LAYER3 OF A MATERIAL CONTAINING GALLIUM, IN RELATION TO A SECOND LAYER2 CONTAINING ALUMINUM, IS OBTAINED BY REACTIVE IONIC ETCHING IN THE PRESENCE OF A PURE FREONIC PLASMA C CL F. ...
[28] 28. Advantageously, some atmospheric pressure plasma etching processes described in WO 98/19337 are fast. Silicon can be etched at the rate of about 10 μm/min. Other kinds of etches can also be used. The dry etch can be preceded by mechanical lapping of the wafer bottom surface110B...
Plasma etching is perhaps the most essential process in semiconductor manufacturing, and possibly the most complex of all fab operations next to photolithography. Nearly half of all fab steps rely on a plasma, an energetic ionized gas, to do their work. Despite ever-shrinking transistor and memory...
Non-thermal plasma etching of MOF thin films in high optical quality for interference sensing ? 2024 Elsevier B.V.Metal鈥搊rganic frameworks (MOFs) in a thin film (TF) form have appeared recently as multifunctional elements for micro- and opto-elect... Alekseevskiy P.V.,Timofeeva M.,Bachi...
We now shift our focus to the electrical characterization of the edge-contacted 2D-2D MSJ field-effect transistors (FETs). After the definition of MoS2channels by the reactive ion etching process, PtTe2-flake-connected MoS2MSJ FETs were fabricated by Ti/Au (10/70 nm) contact pad deposition...
With reference to FIG. 8C, the above plasma etching process is continued with use of the silicon oxide films 42 and 44 as the masks to form the movable comb-tooth portion 48 and the stator comb-tooth portion 47. This substrate is dipped into a hydrofluoric acid solution to etch the oxid...
Then, the wafers are rinsed with deionized water and then blown dry with high purity nitrogen gas. The cleaned wafers are transferred to an ALD system (MNT-PD100Oz-L6S1G2, MNT Micro and Nanotech). On the ALD process, plasma O2 and trimethylaluminum (TMA) were selected as the oxidant ...
Semiconductor Technology steps assembly process, wafer & device fabrication etching, diffusion, metal deposition, passivation, back-lap, wafer probing.
Dry etchingis an etching method to cut the film by the force of the mechanical and chemical reaction. It excites the etching gas (chemical gas) into theplasmaand etches thewafersurface by hit with the accelerated ions in the plasma. It is also able to reduce contamination and to etch highl...