US5735993 Sep 6, 1996 Apr 7, 1998 Nec Corporation Plasma processing apparatus for dry etching of semiconductor wafersUS5735993 * 1996年9月6日 1998年4月7日 Nec Corporation Plasma processing apparatus for dry etching of semiconductor wafersUS5735993 * Sep 6, 1996 Apr 7, 1998 Nec Corporation ...
Step 3: The etching process The etching process in semiconductor fabrication uses a liquid or gas etchant to selectively remove unnecessary parts until the desired circuit patterns are left on the wafer surface. Even though it’s more costly and complicated, dry etching (also called plasma ...
[28] 28. Advantageously, some atmospheric pressure plasma etching processes described in WO 98/19337 are fast. Silicon can be etched at the rate of about 10 μm/min. Other kinds of etches can also be used. The dry etch can be preceded by mechanical lapping of the wafer bottom surface110B...
To this end, the dry cleaning process is supplemented by a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing ...
We now shift our focus to the electrical characterization of the edge-contacted 2D-2D MSJ field-effect transistors (FETs). After the definition of MoS2channels by the reactive ion etching process, PtTe2-flake-connected MoS2MSJ FETs were fabricated by Ti/Au (10/70 nm) contact pad deposition...
Two! Researchers Yue Kuo and Sangheon Lee of the Thin Film Microelectronics Research Laboratory, Chemical Engineering Department, at Texas A&M University (College Station, Texas) have developed a new copper etching method based on a novel plasma/Cu reaction. The process can be done at room ...
Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be charac...
11.1 The Structure of Integrated Circuit (IC) 125 11.2 Resolution of Optical System 128 11.3 Why Plasma Used in the Process 131 References 133 12 Photolithography (Lithography) 135 12.1 The Steps of Lithography Process 135 12.1.1 Cleaning 135 12.1.2 Dehydration Bake 136 12.1...
The industrial electrification pillar relates to the electrification of existing technologies, such as using heat pumps, microwave, and infrared technologies for process heat. Plasma-assisted chemical vapor deposition techniques are widely used in semiconductor manufacturing to deposit thin gas films such as...
Dry etchingis an etching method to cut the film by the force of the mechanical and chemical reaction. It excites the etching gas (chemical gas) into theplasmaand etches thewafersurface by hit with the accelerated ions in the plasma. It is also able to reduce contamination and to etch highl...