半浮栅晶体管(semi-floating gate transistor) 更新时间:2024年12月20日 综合排序 人气排序 价格 - 确定 所有地区 实力供应商 已核验企业 在线交易 安心购 查看详情 ￥0.98/个 广东深圳 INFINEON英飞凌 IKD06N60RA IGBT 晶体管 600V Trenchstop RC Hard SW App, IGBT 深圳市特莱科技有限公司...
A semi-floating gate transistor (SFGT) based 1T pixel can achieve the same functions as the traditional 3T active pixel sensor (APS). The SFGT APS improves the fill factor and the pixel density of CMOS image sensors to meet the requirement for high sensitivity application. This paper ...
As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for ch...
et al. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation. Science 341, 640–643 (2013). Article Google Scholar Makarov, A., Sverdlov, V. & Selberherr, S. Emerging memory technologies: trends, challenges, and modeling methods. Microelectron. Reliab. 52, ...
The semi-floating-gate power device has a simple structure, is easy to manufacture, adapts to high-voltage and high-speed operation and has very high reliability, can increase the threshold voltage of the gallium nitride high-electron-mobility transistor in the working state, so that the ...
免费查询更多半浮栅晶体管(semi-floating gate transistor)详细参数、实时报价、行情走势、优质商品批发/供应信息等,您还可以发布询价信息。
The invention discloses a technological method for a semi-floating-gate transistor. The technological method comprises the steps of forming a semi-floating-gate well region in a substrate, forming an oxide layer on the surface of the substrate, forming semi-floating-gate grooves, which are ...
A semi-floating gate transistor structure includes a substrate, a first N-well region and a second N-well region separated from each other in the substrate, and a gate oxide layer on the substrate. The gate oxide layer includes a separation groove disposed on the first N-well region. The ...
The present application provides a double control gate semi-floating gate transistor and a method for preparing the same. A lightly doped well region provided with a U-shaped groove is located on a substrate; one part of a floating gate oxide layer covers sidewalls and a bottom of the U-...
A semi-floating gate transistor structure includes a substrate, a first N-well region and a second N-well region separated from each other in the substrate, and a gate oxide layer on the substrate. The gate oxide layer includes a separation groove disposed on the first N-well region. The ...