半浮栅晶体管(semi-floating gate transistor) 更新时间:2024年12月20日 综合排序 人气排序 价格 - 确定 所有地区 实力供应商 已核验企业 在线交易 安心购 查看详情 ￥0.98/个 广东深圳 INFINEON英飞凌 IKD06N60RA IGBT 晶体管 600V Trenchstop RC Hard SW App, IGBT 深圳市特莱科技有限公司...
The invention discloses a technological method for a semi-floating-gate transistor. The technological method comprises the steps of forming a semi-floating-gate well region in a substrate, forming an oxide layer on the surface of the substrate, forming semi-floating-gate grooves, which are ...
REPORTS A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation Peng-Fei Wang,1*? Xi Lin,1 Lei Liu,2 Qing-Qing Sun,1* Peng Zhou,1 Xiao-Yong Liu,1 Wei Liu,2 Yi Gong,2 David Wei Zhang1* As the semiconductor devices of integrated circuits approach the ...
东微半导体制造出世界上首个半浮栅晶体管(Semi-Floating Gate Transistor),可用于新型存储器,感光器件及功率器件等应用。 2009 东微半导体获得苏州工业园区领军人才计划项目支持。 2008 苏州东微半导体有限公司在苏州工业园区注册成立,专注于原创半导体器件结构和工艺的创新和研发。 ORIENTAL SEMI(东微)产品 GreenMOS 高压Gre...
We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (<2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra-high-speed writing operations (...
As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-no
The semi-floating-gate power device has a simple structure, is easy to manufacture, adapts to high-voltage and high-speed operation and has very high reliability, can increase the threshold voltage of the gallium nitride high-electron-mobility transistor in the working state, so that the ...
摘要：1. Floating-gate storage cell consisting of an n-channel field-effect transistor whose potentially floating gate electrode comprises a first electrode part which, for effecting the tunnel injections of electrons into the gate electrode (1), is coupled capacitively to a writing electrode (4),...
A normally-off vertical GaN-based transistor on a bulk GaN substrate with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 1.7 kV is presented. P-GaN/AlGaN/GaN triple layers are epitaxially regrown over V-shaped grooves formed over the drift layer....
10,243,519 Bias Control for Stacked Transistor Configuration 10,250,131 Low-Noise High Efficiency Bias Generation Circuits and Method 10,250,199 Cascode Amplifier Bias Circuits 10,250,339 Integrated Circuit Calibration Architecture 10,256,287 Floating Body Contact Circuit Method for Improving ESD Perfo...