Methods for manufacturing non-volatile memory devices including peripheral transistors with reduced and less variable gate resistance are described. In some embodiments, a NAND-type flash memory may include floating-gate transistors and peripheral transistors (or non-floating-gate transistors). The ...
The bit cells in EEPROM and flash memory are CMOS-based transistors that hold a charge on a "floating gate." With no charge on the floating gate, the transistor acts normally, and a pulse on the control gate causes current to flow. When charged, it blocks the control gate action, and ...
(CG) of a floating-gate field-effect transistor () start to change value during a programming operation is controlled so as to avoid adjusting the transistor's programmable threshold voltage toward a programmed value when the transistor is intended to remain in the erased condition, i.e., not...
网络浮栅晶体管;浮闸晶体管;浮闸电晶体
Introduced the concept of floating-gate interference in flash memory cells for the first time. The floating-gate interference causes V/sub T/ shift of a ce... JD Lee,SH Hur,JD Choi - 《IEEE Electron Device Letters》 被引量: 725发表: 2002年 Competitive learning with floating-gate circuits...
NAND flash memory are commonly used in flash memory devices9,10, and FG is their basic structure, which is achieved by introducing a FG layer in a metal-oxide-semiconductor field-effect transistor (MOSFET) to achieve reliable endurance and excellent charge retention performance of the FG memory...
The preferred embodiment of the present invention utilizes a multiple select gate device. In particular, the select gate device is preferably a dual floating gate device rather than the conventional transistor (or device functioning as a conventional transistor) used in the current Flash memory ...
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) In a MOSFET, electrons (students!) can be allowed to flow from the source terminal to the drain terminal by the application of charge to the gate terminal. This charge creates anelectric fieldwhich alters the behaviour of the silicon lay...
As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for ch...
floating gate 美 英 un.浮坞门;浮动栅;浮动闸门 网络浮栅型;浮动闸极 英汉 网络释义 un. 1. 浮坞门 2. 浮动栅 3. 浮动闸门