ayou are the anique one whou I love the whou lipetime! 您是anique一whou I爱whou lipetime![translate] aone of the transistors is known as a floating gate,and the other one is the control gate 因为一个浮动门和另一个是控制门,其中一支晶体管知道[translate]...
A semiconductor memory device includes memory cells, a memory cell array, word lines, a row decoder, and first and second MOS transistors. The memory cell has a floating gate and a control gate. The word line connects commonly the control gates. The row decoder decodes a row address signal...
Semiconductor memory device with MOS transistors each having floating gate and control gate and method of controlling the sameA semiconductor memory device includes memory cells, a memory cell array, a first voltage generating circuit, a reference voltage generating circuit, and a first voltage control...
闪存依靠一系列“浮置栅级晶体管(floating-gate transistors)”单元(cell)来存储数据。浮置栅级晶体管采用三端器件作为存储单 … blog.163.com|基于3个网页 2. 浮栅晶体管 ...ash 和NAND Flash 的物理存储单元都是浮栅晶体管(floating-gate transistors),Intel 在1988 率先发明了NOR Flash,价格 … ...
浮栅gatefloating晶体管transistorsinput POWER SUPPLY CURRENT [I PS ] BASED TESTING OF CMOS AMPLIFIER CIRCUIT WITH AND WITHOUT FLOATING GATE INPUT TRANSISTORS A Thesis Submitted to the Graduate faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the ...
网络晶体管;浮栅晶体管 网络释义
A two-terminal complementary floating gate transistor architecture with a memristive operation mode is proposed. Therefore, a diode configuration wiring scheme is assumed for n-channel metal-oxide-semiconductor and p-channel metal-oxide-semiconductor-based floating gate transistors (MemFlash), which enable...
A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a cap...
An operation, typically an erasure operation, is performed on a floating-gate FET () whose components include a body region (BR) and a control-gate electrode (CG) above a floating-gate electrode (FG). A first body voltage (V) at a body node (N) is converted into a second body voltag...
An operation, typically an erasure operation, is performed on a floating-gate FET (<B>20</B>) whose components include a body region (BR) and a control-gate electrode (CG) above a floating-gate electrode (FG). A first body voltage (V<Sub>BE</Sub>) at a body node (N<Sub>B</Su...