sensors/ liquid gate dielectric field effect transistorradiation noseradiation sensorsillicit radiological material detectionnuclear waste managementradiochemistrynuclear physicsRadiation sensors are essential to detect illicit radiological materials, nuclear waste management, radiochemistry, nuclear physics, and ...
The present invention relates to a method for preparing and testing methods PI liquid gate type field effect transistor based on graphene, wherein the aluminum layer is deposited as a sacrificial layer on a silicon substrate; the PI photoresist was spin-coated on the aluminum layer as a ...
Type:Voltage Regulator;Type:integrated circuit;Model Number:JCS12N65ST;Place of Origin:Original;Brand Name:Original Brand;Description:standard;Voltage - Breakdown:standard;Frequency - Switching:standard;Power (Watts):standard;Operating Temperature:standa
et al. Dopamine receptor D1 agonism and antagonism using a field-effect transistor assay. ACS Nano 11, 5950–5959 (2017). Article CAS PubMed Google Scholar Park, S. J. et al. Human dopamine receptor nanovesicles for gate-potential modulators in high-performance field-effect transistor ...
Chemically sensitive field-effect transistor with polyaniline-ionic liquid composite gate. Saheb Amir,Josowicz Mira,Janata Jirí. Analytical Biochemistry . 2008... A Saheb,M Josowicz,J Janata - 《Analytical Chemistry》 被引量: 67发表: 2008年 Ammonia gas sensing using a graphene field-effect tran...
Using a liquid gate has allowed electrically induced superconductivity in a solid specimen by means of carrier accumulation on the surface. But this phenomenon was limited to materials that became superconductors at low carrier density. It is now shown t
25. The OTP device of claim 21, wherein a gate of said memory FinFET and another gate of said ... W Xia,X Chen 被引量: 3发表: 2014年 Correction to "High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing" The development of next...
A semiconductor device including a semiconductor substrate including a plurality of active regions and a device isolation region for isolating the plurality of active regions; and a buried bit line and a buried gate electrode which are formed in the semiconductor substrate. The device isolation region...
gate voltage (VG). As schematically shown in Fig.1, a droplet of the IL was positioned to cover both the sample and a lateral gate electrode that formed part of a field effect transistor (FET) (see Fig.1aand more details in Methods and Supplementary Fig.1and2). The channel of the ...
Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crysta...