百度试题 结果1 题目In the following devices, which belongs to the field effect transistor? A. JFET B. MOSFET C. BJT 相关知识点: 试题来源: 解析 AB 反馈 收藏
场效应管有什么优点 答案 答:低电压和低功耗。相关推荐 1What are the benefits of the field-effect transistor (FET)?场效应管有什么优点 2What are the ben efits of the field-effect tran sistor (FET)?场效应管有什么优点 反馈 收藏
PROBLEM TO BE SOLVED: To provide a field effect transistor (FET), chief of which is diamond, which can accommodate high-frequency operation and an increase in current density and has an excellent controllability for threshold voltage, and has little variation in element characteristics in the ...
cut-off frequencyIn this work, a high-performance compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (... YJ Yoon,S Cho,JH Seo,... - 《Japanese Journal of Applied Physics》 被引量: 7发表: 2013年 Field effect transistor A field effect ...
Field-Effect Transistor (FET), a semiconductor device in which the current is varied by the action of an electric field that is perpendicular to the current and is generated by the input signal. The operating current in FET is transported by charge carriers of only one sign (electrons or hol...
Define field-effect transistor. field-effect transistor synonyms, field-effect transistor pronunciation, field-effect transistor translation, English dictionary definition of field-effect transistor. n a unipolar transistor consisting of three or more el
CHAPTER 10-THE FIELD EFFECT TRANSISTOR (F.E.T.) Author links open overlay panel https://doi.org/10.1016/B978-0-08-012173-4.50016-8Get rights and content Access through your organization Check access to the full text by signing in through your organization. ...
field-effect transistor (redirected fromField effect transistors) Thesaurus Encyclopedia n (Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is co...
In a field effect transistor including a Schottky gate electrode disposed on an active region in a compound semiconductor substrate, a compressive stress of the gate electrode and a tensile stress of an insulating film serving as a passivation are concentrated on the lower edges of the gate ...
If it is realized, the proposed spin field-effect transistor can revolutionize the way all existing transistor-based devices work through the implementation of a faster and a more efficient performance accompanied by other advantages like non-volatility of data storage, less heat generation, and small...