半浮栅晶体管(semi-floating gate transistor) 更新时间:2024年12月20日 综合排序 人气排序 价格 - 确定 所有地区 实力供应商 已核验企业 在线交易 安心购 查看详情 ￥0.98/个 广东深圳 INFINEON英飞凌 IKD06N60RA IGBT 晶体管 600V Trenchstop RC Hard SW App, IGBT 深圳市特莱科技有限公司...
memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate....
The semi-floating-gate power device has a simple structure, is easy to manufacture, adapts to high-voltage and high-speed operation and has very high reliability, can increase the threshold voltage of the gallium nitride high-electron-mobility transistor in the working state, so that the ...
As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate ...
REPORTS A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation Peng-Fei Wang,1*? Xi Lin,1 Lei Liu,2 Qing-Qing Sun,1* Peng Zhou,1 Xiao-Yong Liu,1 Wei Liu,2 Yi Gong,2 David Wei Zhang1* As the semiconductor devices of integrated circuits approach the ...
We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (<2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra-high-speed writing operations (...
专利名称：Semi-conductor floating gate memory cell with write and erase electrodes 发明人：ADAM, FRITZ GUNTER DR. RER.NAT. DIPL.-PHYS.申请号：EP81101105.5 申请日：19810217 公开号：EP0035160B1 公开日：19830629 专利内容由知识产权出版社提供 摘要：1. Floating-gate storage cell consisting of an n-...
In order to enable low-power and high-speed operations, a poly-Si semi-floating gate (SFG) structure with a tunneling field-effect transistor is adopted for realizing short-term potentiation (STP), and a SiN charge-trap layer is stacked on the SFG for realizing long-term potentiation (LTP)...
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