As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate ...
semi-floating gate memory2D materialsThe recently proposed semi-floating gate memory technology shows the potential to balance conflicts between writing speed and data storage. Although the introduction of the p-n junction greatly improves device writing speed, the inevitable junction leakage limits the ...
REPORTS A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation Peng-Fei Wang,1*? Xi Lin,1 Lei Liu,2 Qing-Qing Sun,1* Peng Zhou,1 Xiao-Yong Liu,1 Wei Liu,2 Yi Gong,2 David Wei Zhang1* As the semiconductor devices of integrated circuits approach the ...
A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation PF, Lin X, Liu L, Sun QQ, Zhou P, Liu XY et al (2013) A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation. ... PF Wang,L Xi,L Liu,... - 《Science》 被引量:...
Semi Connect . 半导体机台技术交流学习文章来源:Semi Connect 作者:Belle 闪速存储器(Flash Memory)又称闪存(Flash),是一种非易失性存储器,用存储单元阈值的高低表示数据。浮栅(Floating Gate )场效应管(见图5-80)是Flash存储单元采用的主要技术。浮栅上的电荷决定了场效应管的...
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The aim of this work is to present a method developed to simulate the direct current and transient properties of the floating gate memories. This method includes metal oxide semi-conductor charge neutrality, charges stored into the floating gate, injection currents and metal oxide semi-conductor fi...
半导体(Semi-conductor):是指常温下导电性能介于导体与绝缘体之间的材料,常见的半导体材料涉及硅、锗、砷化镓、碳化硅、氮化镓等。半导体产品主要分为集成电路、分立器件、光电子器件及传感器四类 BE:Back End 缩写,后端,通常指 IC 设计中的后道布局布线(Layout)阶段,并不...
Floating Gate :浮栅 Forbidden Band :禁带 Four-Point Probe :四探针 FHSS:跳频技术(窄频载波) FSK:频移键控 G 工艺节点:Technology Node,是集成电路内电路与电路之间的距离,精度越高,同等功能的IC体积越小、成本越低、功耗越小,当前工艺节点已达nm级。
Some approaches have been proposed to address the issues on P/E speed and/or endurance for charge-trapping based memory devices. A semi-floating gate memory has been demonstrated to achieve an ultra-fast P/E time [5]. By deploying a semiconductor junction diode connected to the charge storage...