We propose that the lowering of the barrier is due not only to a thin highly-doped region near the Schottky/semiconductor interface, but also to an array of heavily-doped areas separated by higher-barrier regions whose formation depends on the thickness and type of Schottky metals used. It ...
Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect TransistorsLowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistorsdoi:10.1002/adma.201804422Ag...
www.nature.com/scientificreports OPEN Physical Modeling of Gate- Controlled Schottky Barrier Lowering of Metal-Graphene received: 01 September 2015 Contacts in Top-Gated Grapheneaccepted:16November2015 Field-Effect TransistorsPublished:17December2015 Ling-Feng Mao1, Huansheng Ning1, Zong-Liang Huo...
In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is respon...
The barrier height lowering is correlated with the agglomeration of CoSi 2 film and the formation of CoSi 2 nano-islands. The thermal field emission may be the major reason to cause barrier lowering. Although the Schottky contact interface consists of both CoSi 2 nano-islands and Pt film whose...
Schottky barrier controls the transfer of hot carriers between contacted metal and semiconductor, and decides the performance of plasmonic metal–semiconductor devices in many applications. It is immensely valuable to actively tune the Schottky barrier.
The high values of ideality factor and barrier height have been attributed to interfacial layer (PVA), the image force lowering BH and particular distribution of interface states at M/S interface [17], [18], [42]. Recently, the nature and origin of the increase in the ΦB0 and a ...
satis defined as the VBwhen Jtn=1×103A/cm2and VC=0.2 V, DIBL (drain induced barrier lowering) is defined as (Vt,lin−Vt,sat)/(0.2 V−0.01 V) following the definition for MOSFETs. Emitter is always ground, VE=0 V. The polarities of terminal voltages are reversed for a p-type...
A Schottky-barrier gate gallium arsenide field effect structure is made using a self-aligned gate fabrication technique. The resulting device includes source and drain regions, which are parts of a co
Field-enhanced tunneling and barrier lowering in Al—n+GaAs—nGaAs Schottky contacts grown by MBE Schottky barriersSemiconductor process modelingThickness measurementTunnelingA thin, highly Si-doped (n-type) interfacial layer is used for controlled barrier ... K Shenai,SJ Eglash,RW Dutton,... - ...