We propose that the lowering of the barrier is due not only to a thin highly-doped region near the Schottky/semiconductor interface, but also to an array of heavily-doped areas separated by higher-barrier regions whose formation depends on the thickness and type of Schottky metals used. It ...
www.nature.com/scientificreports OPEN Physical Modeling of Gate- Controlled Schottky Barrier Lowering of Metal-Graphene received: 01 September 2015 Contacts in Top-Gated Grapheneaccepted:16November2015 Field-Effect TransistorsPublished:17December2015 Ling-Feng Mao1, Huansheng Ning1, Zong-Liang Huo...
Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETsElectrical and electronic engineeringNanoscale devicesNanoscale materialsUltra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by ...
Schottky barrier lowering of Ni silicide / pSi ( 100 ) using an ytterbium confinement structure for high performance n-type MOSFETs 来自 Semantic Scholar 喜欢 0 阅读量: 6 作者: KH Shen 摘要: A simple but effective rare earth metal (RE) confinement structure is demonstrated to suppress surface...
A first effect isbarrier loweringby the image charge: at a high electric field the charges in the depleted region interact with the image charge recalled in the metal and modify the effective height of the barrier. A second effect arises frompre-breakdownimpact ionization, which produces a smoot...
Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect TransistorsLowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistorsdoi:10.1002/adma.201804422Ag...
In this letter, the Schottky-barrier height (SBH) lowering in Pt silicide/n-Si junctions and its implications to Schottky-barrier source/drain p-field-effect transistors (p-SBFETs) are studied experimentally and numerically. We demonstrate that the increase of the n-Si substrate doping is respon...
is built.According to the calculation results,the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain,channel radius and channel length are studied in detail,which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and ...
L.F. Mao et al., "Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors," Sci. Rep., vol. 5, Dec. 2015, pp. 1-11.Mao L-F, Ning H, Huo Z-L and Wang J-Y 2015 Physical Modeling of Gate-Controlled ...
12 October 2015 Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light Ming-Yen Lu1,2, Ming-Pei Lu3, Shuen-Jium You1, Chieh-Wei Chen1 & Ying-Jhe Wang1 In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO...