barrier height variation. metal work functionMeasurements have been made of the electrical characteristics of Schottky barriers made by evaporating films of various metals (Al, Pb, Ni, Au, Ag, Cu) onto p-type silicon. The barriers were generally lower than on n-type silicon, and in the case...
The absence of change in the barrier height of W to p-type-silicon and n-type-Sij xGex-films suggests that the Fermi level at the interface with Si is pinned relative to the valence-band while it is pinned relative to the conduction when Ge is added....
electrodes to form Schottky barrier with lower heights [9–13], the Schottky barrier height between the S/D electrodes and the conduction band of semiconductor region (φBn) is usually much lower than that between the S/D electrodes and the valence band (φBp) for n type SB-MOSFET [14]...
Schottky-barrier height of a Ti-W alloy on n -type and p -type Si Impurity effects on Schottky barriers have been investigated using a concentrated Ti-W alloy for barrier-height measurements on both n-type and p-type Si(1... MO Aboelfotoh,KN Tu - 《Physical Review B Condensed Matter...
The current–voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their ...
Among the above four parameters, \(A\) and \(P_{E}\) are independent on Schottky barrier, while \(F_{e}\) and \(\eta_{c}\) are functions of Schottky barrier height and Schottky barrier maximum position, respectively33. To reveal how the bias tuning Schottky barrier affects internal ...
Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique. Jiang Yu-Long,Ru Guo-Ping,Lu Fang,Qu Xin-Ping,Li Bing-Zong,Li Wei,Li Ai-Zhen. Chinese Physics . 2002蒋玉龙,茹国平,陆昉,屈新萍,李炳宗,李伟,李爱珍. Schottky Barrier Height Inhomogeneity of Ti/...
查到小木虫上面给出的IP=E（M+）-E（M），但是计算出来的值是负值，文献给出来的是负值。因为计算...
[求助]如何用VASP计算半导体的 ionization potential和Schottky Barrier Height 查到小木虫上面给出的IP=E...
Study on Au Metal/n-type Semiconductor GaN Schottky Barrier; 金属/n型半导体(Au/n-Ga N)肖特基势垒的研究(英文) 2. When theSchottky barrierheight(Eb)is higher than 0. 当TiO2/TCO的肖特基势垒(Eb)大于0。 3. Based on the characteristics of the electronic state in ZnO varistors,Schottky barrier...