barrier height4.5 kV SiC Schottky diodes have been fabricated using Ni as the Schottky contact. A manufacturing yield of 40% is reached for the bigger area diodes (1.6×1.6mm 2) and of 70% for the smaller ones (0.4×0.4mm 2). The measured variations of barrier height and ideality factor...
The Schottky barrier height refers to the energy difference between the metal and the semiconductor in a Schottky diode. It has been extensively studied and found to vary for different metals, even though it does not scale proportionally with the metal work function. ...
查到小木虫上面给出的IP=E（M+）-E（M），但是计算出来的值是负值，文献给出来的是负值。因为计算...
摘要原文 We present the Schottky-barrier height determination for the Fe/ZnSe(001) system performed by core and valence level photoelectron emission spectroscopy. Above the thickness of 2 ML, the Fe–Fermi level position is stabilized at 1.6 eV above the valence-band maximum of the n-type undop...
1.Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN[J].G. Greco,P. Prystawko,M. Leszczyriski,Journal of Applied Physics .2011,第12期 机译:在p-GaN上退火的Au / Ni触点中的电结构演变和肖特基势垒高度 ...
As a result, a strong band bending occurs at the silicide-silicon interface giving rise to a lowering of the effective Schottky barrier height. In turn, an increased electron as well as hole injection into the channel leads to improvements of the off- and on-state of the SB-MOSFETs. Using...
Schottky barrier height was obtained by fitting the curves of 1/Cand V with the experimental one, using the Schottky barrier height itself as a fitting parameter. 展开 关键词: GaN Cu Ni Au C-V method Schottky diode Schottky barrier height ...
This paper presents a modified expression for the Schottky barrier height, ΦB, that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier lowering. Updated Schottky barrier height for HEMT...
electrons in semiconductors will be forced to leave the semiconductor-metal interface. As a result, a W region containing excess positive donor ions is formed. This region is called the ‘space-charge region’ or ‘depletion region’. The Schottky barrier can be calculated by the formula [149]...
1) Schottky barrier height 肖特基势垒高度 1. The result shows thatSchottky barrier heightdecreases , ideal factor increases and surface condition of contacts degenerates when annealing temperature increases for unintentional doped GaN. 实验结果表明,在非故意掺杂的样品上,随退火温度的升高,肖特基势垒高度下降...