中文名称:P型二硫化钼晶体 英文名称:p-type MoS2 crystals 性质分类:半导体 合成方法:CVT P型半导体通常是指掺杂有能够在晶体中产生正电荷(空穴)的杂质的半导体材料。对于二硫化钼(MoS2)这样的材料来说,要实现P型掺杂,需要引入能够提供空穴的杂质或缺陷。 在实验室研究中,科学家们尝试通过不同的方法实现P型掺杂。 ...
The back-gated as-grown Te-doped multilayer MoS2 field-effect transistor (FET) is observed to exhibit p-type behavior with a maximum mobility of 0.036cm2/V路s, ON/OFF current ratio of 7.8脳103, and a Schottky barrier height of 32meV. A quantitative Schottky barrier height of a p-type ...
p型单层mos2电子亲和能是指p型单层mos2吸收电子的能力。它是描述原子或离子吸收电子能力的重要指标,与元素的化学性质和化学反应过程密切相关。p型单层mos2电子亲和能的具体数值取决于原子或离子的化学性质,可以为正、负或零。正值的电子亲和能代表原子或离子吸收电子是一个放热过程,具有较强的...
Molybdenum disulfide (MoS2) films possess intrinsic n-type conductivity, and thus development of p-type MoS2 films for realizing practical next-generation complementary metal oxide semiconductor devices is extremely challenging. The use of dopants is a well-known conventional approach for engineering intri...
In this study, p-type MoS2 is innovatively introduced on the n-type g-C3N4 loaded with Ni2P, which forms a new earth-abundant and environmentally benign photocatalyst for solar hydrogen generation. Firstly, we prepared the ternary MoS2–g-C3N4/Ni2P composite by ultrasonically mixing MoS2 ...
Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the ...
& Zu, X. Electronic structures and magnetic properties of MoS2 nanostructures: atomic defects, nanoholes, nanodots and antidots. Physical Chemistry Chemical Physics 15, 10385–10394 (2013). Article CAS PubMed Google Scholar Cao, T., Li, Z. & Louie, S. G. Tunable Magnetism and Half-...
布法-Sb2Se3铟镓硒晶体-InGaSe2-2D铅铋碲晶体-PbBi2Te4Kish石墨晶体-Kish graphite灰砷晶体-Grey arsene-2D天然二硫化钼晶体-MoS2-HQ钠锌碲氧晶体-Na2Zn2TeO6砷化钽晶体-TaAs3R-二硫化钼晶体-3R-MOS2氯化钌晶体-RuCl33R二硫化钼晶体-3R-MOS2氧化镓晶体-Ga2O3-layered三硒化二铟晶体- In2Se3-β-phase-...
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture. Nat Mater , 2023 , 22: 1324 -1331 CrossRef Google Scholar [6] Li W, Gong X, Yu Z. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature , 2023 , 613: 274 -279 CrossRef Google...
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