中文名称:P型二硫化钼晶体 英文名称:p-type MoS2 crystals 性质分类:半导体 合成方法:CVT P型半导体通常是指掺杂有能够在晶体中产生正电荷(空穴)的杂质的半导体材料。对于二硫化钼(MoS2)这样的材料来说,要实现P型掺杂,需要引入能够提供空穴的杂质或缺陷。 在实验室研究中,科学家们尝试通过不同的方法实现P型掺杂。 ...
二硫化钼晶体(2H-合成/99.995%/n 型) MoS2(Molybdenum Disulfide)-syn 晶体尺寸:~10毫米 电学性能:N型半导体 晶体结构:六边形 晶胞参数:a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120° 晶体类型:合成 晶体纯度:>99.995%X-ray diffraction on a 2H-MoS2 single crystal aligned along...
Sub-stoichiometric oxides have demonstrated stable 2D material doping [1], but often degrade the subthreshold swing (S) and current on/off ratio (Imax/Imin) of a device. Here, we demonstrate that AlOx can n-dope monolayer (1L) MoS2 while preserving Imax/Imin and S. The AlOx doping ...
Here, it is shown that SU8, an epoxy‐based photoresist, can be used for nondegenerate n‐type doping of monolayer MoS2. The doping level can be finely tuned via low‐temperature annealing. The doping method exhibits good ambient stability. The high degree of mechanical flexibility and low ...
布法-Sb2Se3铟镓硒晶体-InGaSe2-2D铅铋碲晶体-PbBi2Te4Kish石墨晶体-Kish graphite灰砷晶体-Grey arsene-2D天然二硫化钼晶体-MoS2-HQ钠锌碲氧晶体-Na2Zn2TeO6砷化钽晶体-TaAs3R-二硫化钼晶体-3R-MOS2氯化钌晶体-RuCl33R二硫化钼晶体-3R-MOS2氧化镓晶体-Ga2O3-layered三硒化二铟晶体- In2Se3-β-phase-...
Herein, a p‐type (WSe2/WS2) and n‐type (MoS2/WSe2) photovoltaic self﹑owered gas sensor is demonstrated using 2D TMD heterostructures for the first time. The gas sensors are operated by the photovoltaic effect of 2D TMD heterostructures, which are uniformly synthesized by the vacuum‐based...
37. Zhang K, Zhang T, Cheng G et al (2016) Interlayer transition and infrared photodetection in atomically thin type-II MoTe2/MoS2 van der Waals heterostructures. ACS Nano 10:3852–3858. https://doi.org/10.1021/ acsnano.6b00980. 38. Bie Y-Q, Grosso G, Heuck M et al (2017) A ...
In this study, p-type MoS2 is innovatively introduced on the n-type g-C3N4 loaded with Ni2P, which forms a new earth-abundant and environmentally benign photocatalyst for solar hydrogen generation. Firstly, we prepared the ternary MoS2–g-C3N4/Ni2P composite by ultrasonically mixing MoS2 ...
MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors Recently, MXenes, which are 2D early transition metal carbides and carbonitrides, have attracted wide attention because of their excellent conductivities. ... J Xu,J Shim,Park, Jin-Hong,... - 《Advanced Functional ...
We present an efficient method for accurately computing electronic scattering rates and transport properties in materials with complex band structures. Using ab initio simulations, we calculate a limited number of electron–phonon matrix elements, and ex