Tallarico, A.N.; Stoffels, S.; Magnone, P.; Posthuma, N.; Sangiorgi, E.; Decoutere, S.; Fiegna, C. Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs. IEEE Electron Device Lett. 2017, 38, 99-102. [CrossRef]...
For the first time, the preserved OFF-state drain blocking capability has been demonstrated in p-GaN HEMTs after forward gate breakdown. Benefitting from the reduced metal/p-GaN contact region, the gate breakdown was limited to take place only at the metal/p-GaN junction, with the p-GaN/...
基于对p-GaN HEMT器件栅极击穿特性的研究,以“Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements” 为题发表在IEEE Transactions on Electron Devices,提出了一种新型的栅极击穿测量方式,能够将p-GaN器件的肖特基势垒击穿、PN结击穿及钝化层击穿特性独立表征,为研...
Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain 2022, IEEE Electron Device Letters A Novel AlGaN/Si<inf>3</inf>N<inf>4</inf> Compound Buffer Layer HEMT with Improved Breakdown Performances 2022, Micromachines High-performance Reverse Blocking p-GaN HEMT...
AlGaN/GaN HEMTs with p-GaN gates have not been extensively studied from stability and reliability perspectives. Gate breakdown is an important aspect of such assessments that up to now has not been intensively reported. Figure 1: Schematic cross-section of Schottky metal/p-GaN gate AlGaN/GaN HE...
Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate IEEE Trans. Electron Devices, 63 (6) (2016), pp. 1-6 View in ScopusGoogle Scholar [6] A.N. Tallarico, et al. Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs IEEE Electron Device Le...
Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Kato and T.P. Chow, "Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on si substrate with high-breakdown voltage," Solid-State Electronics... H Kambayashi,Y Satoh,S Ootomo...
The impact of different gate metals-Ni/Au, Ti/Au and Mo/Ti/Au on the performance of p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Compare to Ni/Au-gate HEMTs, the devices with a Mo/Ti/Au gate can improve 32% of the breakdown voltage with...
Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode Peng Wu, Hong-Yu Zhu, Jin-Xing Wu, et al., Acta Physica Sinica, 2023 Study on H plasma treatment enhanced p-GaN gate AlGaN/GaN HEMT with block layer Huang Xing-Jie, Acta...
相关工作以Improvement of Breakdown Voltage and on-Resistance in Normally-off AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate为题发表在IEEE Trans. Electron Devices [1],论文的第一作者是中科院苏州纳米所博士生魏星,通讯作者为张宝顺研究员、蔡勇研究员。