近日,相关论文发表在美国旧金山举办的 IEEE 国际电子元件会议(International Electron Devices Meeting,IEDM)上,题目为《具有超低动态电阻的 6500V 有源钝化氮化镓 p 型栅高电子迁移率晶体管》(6500-V E-mode active-passivation p-GaN gate HEMT with ultralow dynamic RON)。 北京大学博士研究生崔家玮为论文第一...
p-GaN Gate HEMT器件阈值稳定性及其机理Study of the Physics of Vth Instability of p-GaN Gate HEMT陈匡黎电子科技大学博士ZHOU QiProfessor of University of Electronic Science and Technology of China 展开更多0 条评论guansheng发消息 分享知识,共同成长。把复杂的事情掰扯明白! 关注1万...
与传统器件相比,该器件的阈值电压从1.8V显著提高到7.1V,栅极击穿电压和断态击穿电压分别提高到26.9V和1980V。研究成果以 “High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V” 发表在IEEE上[Siheng Chen et al,IEEE Electron Dev ice Letters, vol. 45, no. 12, pp2343–2346, De...
与传统器件相比,该器件的阈值电压从1.8V显著提高到7.1V,栅极击穿电压和断态击穿电压分别提高到26.9V和1980V。研究成果以 “High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V” 发表在IEEE上[Siheng Chen et al,IEEE Electron Device Letters, vol. 45, no. 12, pp2343–2346, Decem...
本研究所提出的u-GaN/p-GaN结构能有效提高功率转换系统的可靠性,相关工作以“p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering”为标题发表在IEEE TED杂志上[2]。南科大深港微电子学院与加拿大哥伦比亚大学联培博士周广楠为论文第一作者,于洪宇为通讯作者,该工作也得到了加拿大...
In this work, an enhancement-mode (E-mode) p-GaN gate metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with 10-nm-thick Al2O3 film was successfully fabricated. Good oxide film quality and excellent Al2O3/p-GaN MOS interface properties were achieved, as evidenced by ...
功率HEMT的p-GaN栅极可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs钟耀宗中国科学院苏州纳米技术与纳米仿生研究所助理研究员ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences ...
A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the pr...
P沟道指的是沟道是二维空穴气(2DHG)的HEMT，导电是空穴。pGaN栅只是HEMT的gate是pGaN，用来得到增强型...
High-temperature operation of the p-GaN gate high-electron-mobility transistor (HEMT) was investigated, specifically up to 500 °C. The p-GaN gate HEMT demonstrated stable behavior with normally-off operation, steep increase of drain current in the subthreshold region, and suppressed off-state cur...