We studied three different wafers having different Mg-doping concentration levels in the p-GaN, which correspond to different electric fields at the metal/p-GaN junction and different gate leakage current levels. For the first time we compare the device reliability from two different perspectives, ...
While the gate leakag... Chou,C Y.,P G.,... - 《Electron Device Letters IEEE》 被引量: 54发表: 1996年 Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V) We report recessed-gate AlO/AlGaN/GaN normally-OFF metal-oxide...
Extra gate length will lead to the rising of the gate leakage current under high voltage. The overhang length of the field plate is a critical factor for breakdown performance, over placing the length of overhang may result in an additional current leakage path. 展开 关键词: p-GaN HEMTs ...
Feasibly adjusting the gate leakage and the device performance in balance is an obvious challenge. Additionally, stacking the high-k dielectric as a gate dielectric in nanonode process is an appreciate way to promote the drive current in pMOSFETs. Unfortunately, the amount of oxygen vacancy or th...
The leakage current I L of offset gate n- and p-channel excimer laser annealed polycrystalline silicon thin-film transistors (polysilicon TFTs) has been investigated experimentally. It has been found that the leakage current is almost independent of the polysilicon layer quality. In n-type polysili...
在gan中高浓度的mg原子掺杂可能会导致出现反相畴、点缺陷、表面mg突起等问题。根据stockman和posthuma等人的研究(ontheoriginoftheleakagecurrentinp-gatealgan/ganhemts,arnostockmanetal.,2018ieeeirpsconference;impactofmgout-diffusionandactivationonthep-gangatehemtdeviceperformance,n.e.posthumaetal.,201628thispsd...
Although GaN circuit models usually have the same characteristics as traditional field-effect transistors, GaN P-HEMTs have many unique behaviors, such as gate leakage current, self-heating or dispersion effects caused by defects and current collapse effect [[12], [13], [14]]. At present, ...
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Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer The reduction of gate leakage current in AlGaN/GaN metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) is influenced by ... D Kikuta,JP Ao,Y Ohno - 《Solid ...