Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.doi:10.1049/iet-cds.2020.0015Deepak Kumar PandaRajan SinghTrupti Ranjan LenkaThi Tan PhamRavi Teja VelpulaBarsha JainHa Quoc Thang BuiHieu Pham Trung Nguyen...
Furthermore, the critical dead time is found when there is no short through and the dead time is smallest. These results can instruct the 650V GaN E-HEMT gate drive design.Yi, ZhangYifan, TanTeng, LiuCai, ChenYong, Kang
The special P-GaN cap layer can reduce the R onA by 10%, and it can even increase the on-state current in the saturation region. The CS-SJ HEMT combines both doping pillars and special P-gate structures, and the R onA can be reduced by 14%. By the optimized design, the R onA ...
AlGaN/GaNGates lengthHEMTH4-SiC substrateInGaNSilvaco-TCADIn this paper we simulate a high electron mobility transistor structure of two HEMTs, by sharing the drain, with the using Silvaco-Tcad software. Our two HEMTs AlGaN and InGaN, on H4-SiC substrate and 50 nm gates length shows a very...
N. R. Das and P. K. Basu, "A comparative study of gain, bandwidth and noise performance of MSM-HEMT and MSM-HBT integrated photoreceivers at 1.55 $\mu$ m", IETE Tech. Rev. , vol. 16, pp. 441-447, 1999N. R. Das and P. K. Basu, "A comparative study of gain, ...
sustainability Article Comparing Characteristics of Environmental Behaviors and Spatial Types in Open and Gated Housing Blocks: A Case Study of Changchun, China Jiayu Huang 1,*, Suguru Mori 2 and Rie Nomura 2 1 Graduate School of Engineering, Hokkaido University, North 13, West 8, Kita-ku, ...