field time dependent breakdowngate oxide breakdown/ B2560B Semiconductor device modelling and equivalent circuits B2560S Other field effect devicesThe model for field-time-dependent breakdown in the gate oxide of MOS devices is extended and verified with experimental data. The model permits accelerated ...
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability The properties of the so-called time dependent dielectric breakdown (TDDB) of silicon dioxide-based gate dielectric for microelectronics technology have be... EY Wu,J Suñé - 《Microelectronics Reliability》 被引...
TTDB-Time Dependent Dielectric Breakdown: Thin layers of silicon dioxide used as a dielectric for capacitors or as the gate oxide for a MOS semiconductor device are subject to a wearout mechanism known as time dependent dielectric breakdown (TDDB). This mechanism causes the dielectric to break ...
2)Time Dependent Dielectric Breakdown与时间有关的介质击穿(TDDB) 3)dielectric breakdown介质击穿 1.Research on dielectric breakdown and discharge channel in powder-mixed EDM;混粉电火花加工介质击穿及放电通道位形研究 2.The dielectric breakdown of silicon dioxide film has been discussed when ESD pulse vol...
We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive...
Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes Effects of oxidation and nitric oxide (NO) post-oxidation annealing (POA) processes on the gate oxide integrity on 4H-SiC are investigated. Interface state... BYT A,YTH B,TLW B,... - 《Microelectro...
Time-dependent dielectric breakdown of chemical-vapour-deposited SiO/sub 2/ gate dielectrics Time-dependent dielectric breakdown (TDDB) data are presented for the first time on 200 AA chemical-vapour-deposited oxide films. The electric-field stress was performed at highly accelerated conditions (11-12...
Bao-Ru Young,Tung-Heng Hsieh 申请号:US1559904 5 申请日:20170518 公开号:US106584 86B 2 公开日:20200519 专利附图: 摘要:The present disclosure describes an exemplary replacement gate process that forms spacer layers in a gate stack to mitigate time dependent dielectric breakdown (TDDB) failures....
Time-Dependent Dielectric Breakdown (TDDB)Deuterium was incorporated into the HfAlO{sub}x/SiON gate dielectric by the use of heavy water (D{sub}2O) ... K Torii,T Kawahara,K Shiraishi - 《IEEE Electron Device Letters》 被引量: 0发表: 2005年 Nitrogen profile engineering in the interfacial ...
The current invention provides a method of determining the lifetime of a semiconductor device due to time dependent dielectric breakdown (TDDB). This method includes providing a plurality of samples of dielectric layer disposed as a gate dielectric layer of a MOS transistor, approximating a source/...