The method further includes forming a layer of photoresist and then patterning the layer of photoresist to protect a middle portion of the polysilicon layer of the non-silicided poly resistor stacks , etching th
FIG. 2 shows the relation between the concentrations of the P−− diffusion layer and the diffusion layer resistance region. When the LDD structure (HV LDD) of the HV ESD protection device11A is used as the ballast resistor of the LV ESD protection device11B, it is rather preferable than...
The method further includes forming a layer of photoresist 180 and then patterning the layer of photoresist 180 to protect a middle portion of the polysilicon layer 100 of the non-silicided poly resistor stacks 30, etching the exposed portions of the dielectric capping layer 170, and removing ...
The present invention provides a process for fabricating a non-silicided region in an integrated circuit. The process of the invention can be employed in the fabrication of a resistor or an electrostatic discharge protection device, or the like. The process of the invention provides a silicide bl...