The method further includes forming a layer of photoresist and then patterning the layer of photoresist to protect a middle portion of the polysilicon layer of the non-silicided poly resistor stacks , etching the exposed portions of the dielectric capping layer , and removing the patterned ...
FIG. 2 shows the relation between the concentrations of the P−− diffusion layer and the diffusion layer resistance region. When the LDD structure (HV LDD) of the HV ESD protection device11A is used as the ballast resistor of the LV ESD protection device11B, it is rather preferable than...
The method further includes forming a layer of photoresist 180 and then patterning the layer of photoresist 180 to protect a middle portion of the polysilicon layer 100 of the non-silicided poly resistor stacks 30, etching the exposed portions of the dielectric capping layer 170, and removing ...