John P.S. (Spokane, WASHINGTON, US) Claims: The invention claimed is: 1. A method of forming a non-volatile resistive oxide memory cell, comprising: forming a first conductive electrode of the memory cell as part of a substrate, the first conductive electrode comprising one or more ...
8. The MOSFET structure of claim 1, wherein the junction depth of said first and second resistor wells is variable. 9. The MOSFET structure of claim 8, wherein a silicide blocking mask is deposited above said first and second resistor wells thereby inhibiting the formation of silicide and de...
and etch processes required by the method of the present invention. It will be understood that the gate electrode material may include a silicide or polycide composition. The chemistry and fabrication techniques employed in the method of the present invention are known in the art and constitute co...
22. The semiconductor structure of claim 15 wherein said gate conductor comprises polySi, SiGe, an elemental metal, an alloy of an elemental metal or a silicide of an elemental metal. 23. The semiconductor structure of claim 15 further comprising a Si-containing material within each of the ...
For example, a resistor may formed using polysilicon, undoped polysilicon, polysilicide, n-type diffusion, p-type diffusion, n-well diffusion, and a transistor channel, among others. This resistor may be integrated with other devices or formed from the layout of the memory cell by the ...