1Elements (metals and intermetallic alloys; metalloids and nonmetals; carbides, silicides, nitrides, phosphides) 2Sulphides and sulphosalts (sulphides, selenides, tellurides; arsenides, antimonides, bismuthides; sulpharsenites, sulphantimonites, sulphbismuthites, etc.) ...
SEMICONDUCTOR DEVICE HAVING SILICIDE TRANSISTORS A 优质文献 相似文献 参考文献 引证文献MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates The MOS-VLSI parameters and process compatibility of a high-conductivity refractory silicide gate with a sheet resistance of 2 Ω/□ have been evaluated....
Electronic structures of semiconducting alkaline-earth metal silicides Electronic structures and densities of states of the following alkaline-earth metal (AEM) silicides have been calculated using the first-principle pseudopo... Y Imai,A Watanabe,M Mukaida - 《Journal of Alloys & Compounds》 被引...
Engineering phonon transport in physical systems is a subject of interest in the study of materials, and has a crucial role in controlling energy and heat transfer. Of particular interest are non-reciprocal phononic systems, which in direct analogy to el
SILICIDE COMBINED SILICON MATERIAL AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING THE SAME 来自 百度文库 喜欢 0 阅读量: 11 申请(专利)号: JP20130096122 申请日期: 2013-05-01 公开/公告号: JP2013253012A 公开/公告日期: 2013-12-19 申请(专利权)人: FURUKAWA ELECTRIC CO LTD:THE ...
The silicides have the molecular formula RSi. R is an organic, organometallic, and/or inorganic radical (or a mixture). Si represents silicon. In listed formulae, R is present as one or more atoms of Ti, Ni, Fe, Th, B (silicon tetraboride), Co, Pt, Mn, CSi/poly-CSi, Ir, N,...
Nonvolatile memory cell including carbon storage element formed on a silicide layer Nonvolatile memory cell including carbon storage element formed on a silicide layer., , , The Patent Description & Claims data below is from USPTO Patent A... SD Llc 被引量: 1发表: 0年 加载更多0关于...
In some embodiments, source lines520S are silicided to reduce their resistance. The silicidation can be performed using the source line silicidation techniques described in U.S. patent application Ser. No. 09/640,139. FIG. 24 illustrates another flash memory array according to the present inv...
Subsequently, as shown in FIG. 4D, a tungsten silicide film having a film thickness of about 200 nm is deposited as a second electroconductive film on the entire surface and is processed by well-known lithography and dry etching techniques to form word lines10. In this word line10forming ste...
(N), and an oxide film (O) between one of the first and second control gates106A and106B formed of polysilicon corresponding to the M (Metal) of MONOS and the P-type well102. The first and second control gates106A and106B may be formed of a conductive material such as a silicide....