SEMICONDUCTOR DEVICE HAVING SILICIDE TRANSISTORS A 优质文献 相似文献 参考文献 引证文献MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates The MOS-VLSI parameters and process compatibility of a high-conductivity refractory silicide gate with a sheet resistance of 2 Ω/□ have been evaluated....
Electronic structures of semiconducting alkaline-earth metal silicides Electronic structures and densities of states of the following alkaline-earth metal (AEM) silicides have been calculated using the first-principle pseudopo... Y Imai,A Watanabe,M Mukaida - 《Journal of Alloys & Compounds》 被引...
Engineering phonon transport in physical systems is a subject of interest in the study of materials, and has a crucial role in controlling energy and heat transfer. Of particular interest are non-reciprocal phononic systems, which in direct analogy to el
The silicides have the molecular formula RSi. R is an organic, organometallic, and/or inorganic radical (or a mixture). Si represents silicon. In listed formulae, R is present as one or more atoms of Ti, Ni, Fe, Th, B (silicon tetraboride), Co, Pt, Mn, CSi/poly-CSi, Ir, N,...
disillusionment的中文翻译及音标 n. 1.醒悟;理想破灭 disillusionize是什么意思 v. 觉醒;幻灭 disillusioned是什么意思 令人灰心的,令人幻灭的 disillusion怎么翻译及发音 v. [T] 1.使醒悟;使不再抱幻想;使...的理想破灭 n. 1.[U]醒悟;理想破灭 disilicide的中文解释 二硅化物 猜...
1, wherein the gate electrode of each of the plurality of erasable and programmable memory cell transistors, the selection transistor, and the peripheral transistor is a stacked gate structure including a floating gate and a control gate, the control gate comprising a metal or a metal silicide....
FIG. 9A is the cross-sectional view of FIG. 8 following formation of an electrically conductive layer142over the component stacks of the localized trapped charge memory cell structures and the oxide layers140A-140C. The electrically conductive layer142may be, for example, a metal-silicide layer...
H Otani,N Kochi - US 被引量: 25发表: 2004年 CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOURCE AREAS AND NON-CONFORMAL METAL SILICIDE REGIONS A non-conformal metal silicide in a transistor of recessed drain and source configuration may provide enhanced efficiency with respect ...
160 to Mei et al. discloses a percussion primer that contains calcium silicide, DDNP, and an alkaline or alkaline earth nitrate. U.S. Pat. No. 5,167,736 to Mei et al. discloses a percussion primer that includes DDNP and boron and U.S. Pat. No. 5,567,252 to Mei et al. ...
outside the dummy pattern may be overlapped by the control gate. The gate insulating layer can be a thermal oxide layer, the floating gate can be formed of polysilicon, the insulating spacer can be an oxide spacer, and the control gate can be formed of polysilicon, silicide, polycide, or...