Selective removal method of non-silicide metalPROBLEM TO BE SOLVED: To provide a method of removing any metal residue that has not been silicided during formation of a metal silicide.オウマールアリマオウ
The present invention discloses a method to fabricate the non- silicide region for an ESD protective devices in a substrate. Firstly, a substrate is provided and it has field oxide regions to define an electrostatic discharge (ESD) region, a PMOS region and an NMOS region. A gate and a ga...
Mam-Tsung WangUSUS6259140 Sep 30, 1999 Jul 10, 2001 Macronix International Co., Ltd. Silicide blocking process to form non-silicided regions on MOS devicesUS6259140 * Sep 30, 1999 Jul 10, 2001 Macronix International Co., Ltd. Silicide blocking process to form non-silicided regions on MOS...
SEMICONDUCTOR DEVICE HAVING SILICIDE TRANSISTORS AND NON-SILICIDE TRANSISTORS FORMED ON THE SAME SUBSTRATE AND METHOD FOR FABRICATING THE SAME 来自 百度文库 喜欢 0 阅读量: 14 申请(专利)号: US20060522996 申请日期: 2006-09-19 公开/公告号: US2007131984A1 公开/公告日期: 2007-06-14 ...
Electron beam charging without any conventional electrical measurements has been used to understand gate electrode leakage currents in a silicide process. Using this technique, it was determined that the leakage is caused by single defects which are small compared to the typical circuit dimensions, whic...
SILICIDE COMBINED SILICON MATERIAL AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING THE SAME 来自 百度文库 喜欢 0 阅读量: 11 申请(专利)号: JP20130096122 申请日期: 2013-05-01 公开/公告号: JP2013253012A 公开/公告日期: 2013-12-19 申请(专利权)人: FURUKAWA ELECTRIC CO LTD:THE ...
The first and second sidewall spacers are formed from a low-K spacer material that is substantially non-reactive with nickel, for example, SiHC, hydrogen silsesquioxane and methyl silsesquioxane. The nickel silicide layers are disposed on the source/drain regions and the gate electrode. A method...
The effects of lithium absorption on the crystal structure and electronic properties of IrSi, a binary silicide with a noncentrosymmetric crystal structure, were studied. X-ray and neutron diffraction experiments revealed that hexagonal IrSi(space group P6mc) transforms into trigonal LiIrSi(space group...
A non-conformal metal silicide in a transistor of recessed drain and source configuration may provide enhanced efficiency with respect to strain-inducing mechanisms, drain/source resistance and the li
Kang, S. J.Munoz-Garcia, J.Cuerno, R.Physical review, BB. Moon, S. Yoo, J.-S. Kim, S.J. Kang, J. Munoz-Garcia, R. Cuerno, Ion-beam nanopatterning of silicon surfaces under co- deposition of non-silicide-forming impurities. Phys. Rev. B 93, 115430 (2016)...