Shaw, et al., “Negative Photoresists for Optical Lithography,” IBM Journal of Research and Development, vol. 41, No. 1/2, Jan./Mar. 1997, pp. 81-94, 15 pages.Shaw, J.M., et al., Negative photoresists for optical lithography. Ibm Journal Of Research And Development, 1997. 41(1...
Negative photoresists for optical lithography Negative photoresists are materials that become insoluble in developing solutions when exposed to optical radiation. They were the first systems used to pa... JM Shaw,JD Gelorme,NC Labianca,... - 《Ibm Journal of Research & Development》 被引量: ...
1.Researches on the two-photon photopolymerization technology ofSU8 negative photoresisthave been processed.飞秒激光SU8负性光刻胶双光子聚合工艺研究。 2)SU8 lithographySU8光刻 1.The fabrication of micro-fluidic chips bySU8 lithographyon transparent substrate for integrated optical detection was studied,...
A suitable process for forming a polyimide pattern by using the negative photoresist composition of the present invention includes the steps as follows: (i) coating the negative photoresist composition onto an adequate substrate by spin coating or a like method; (ii) prebaking; (iii) exposing; ...
In processes for the production of semiconductor devices, for example, IC or LSI, fine fabrication has been conducted by means of lithography using a photoresist composition. In recent years, as the degree of integration increases in integrated circuits, it has been desired to form an ultra fine...
Advanced negative photoresists for both KrF-excimer laser lithography (DN 21) and deep-UV broadband irradiation (DN 41) have been investigated. The materia... H Roeschert,RR Dammel,C Eckes,... - Proceedings of SPIE - The International Society for Optical Engineering 被引量: 32发表: 1992年...
A phase shifting mask set and method of using the phase shifting mask set to pattern a layer of negative photoresist. The mask set comprises a first phase shifting mask and a second phase shifting mask. The first and second phase shifting masks have regions of 90° phase shift and &min...
The bottom line of this finding is that we can realize two different components A and B plus voids within by using only a single photoresist and gray-tone optical lithography. For the temperature-dependent measurements, the samples are fixed to a Peltier-element heater within a small ...
Y Kawabe,S Kanna,F Nishiyama 被引量: 16发表: 2001年 Photoresists Based on Network Formation in UV Lithography Photoresists are essential for making fine patterns in LSI production. Photoresists are divided into two types, i.e., positive and negative types. The posi... Masamitsu,SHIRAI - ...
We performed our experiments with a2mm ϫ2mm array of nanorods on a glass substrate fabri-cated using electron-beam lithography with a JEOL JBX-6000FS writer.To prevent a charging effect in the case of the glass substrate,a thin Cr layer was deposited on top of the double layer of poly...