网络近能隙边缘发光峰 网络释义 1. 近能隙边缘发光峰 当Zn1-xMgxO奈米柱镁含量升高时,其近能隙边缘发光峰(near-band-edge emission)会有蓝位移的现象发生,由变温PL分析可 …etdncku.lib.ncku.edu.tw|基于4个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
Surprisingly, the peak emission energy is about 30meV higher than that of the single-crystalline diamond. Raman scattering spectroscopy indicates that the energy difference should originate from the excitonic properties of the NPD and not the phonon. Hence, NPD has a large bandgap compared to ...
Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires. Appl. Phys. A: Mater. Sci. Process. 2010, 100, 165-170.Zhao, Q.; Cai, T.; Wang, S.; Zhu, R.; Liao, Z.; Yu, D. Enhanced near-band-edge emission and field emission properties from ...
网络释义 1. 禁带边 带边光吸收,absorption... ... ) band-edge emission 带边发射 )near-band-edge禁带边) region with boundary 带边区域 ... www.dictall.com|基于 1 个网页 2. 近能带边缘 当TMIn 流率最大(450sccm) 时, YL 相对於近能带边缘(near-band-edge) 谱峰 Inbe的萤光强度由未掺杂铟...
The deepest emission (e,A 0 ) follows the calculated shift of the hh band-edge, although manifestation of hh character is unexpected under the conditions of tensile biaxial strain. For the shallower excitonic emissions, the strain-induced lh shift is comparable to their smaller binding energy ...
1. Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O-2 annealing effects [J] . Morhain C., Teisseire-Doninelli M., Vezian S., Physica status solidi, B. Basic research . 2004,第3期 机译:MBE生长的ZnO外延层的近带边缘发射:鉴...
Emission mechanism of localized excitons has been assessed in the In x Ga 1− x N ( x =0.1 and 0.2) single quantum well (SQW) by means of electroreflecta... Y Narukawa,K Sawada,Y Kawakami,... - 《Journal of Crystal Growth》 被引量: 58发表: 1998年 Electronic subband structure of...
After the 700–800 °C annealing, the main emission seen in the spectra is the band in the visible range 450–700 nm which mainly comes from defects in the ZnO film. The PL peak at around 380 nm of the spectrum derives from NBE recombination involving excitons in ZnO, and the peak at...
Thin films of nickel-doped zinc oxide (Zn1−xNixO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1−xNixO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV...
Thin films of nickel-doped zinc oxide (Zn1-NiO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1-NiO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV as the...