The emission band of donor-acceptor pairs (DAP) with a maximum at about 4200 has been shown to possess a complex structure. Theoretical analyses and exciton spectroscopy data make it possible to calculate the ionization energies for the donors and acceptors participating in the formation of DAP, ...
BAND-EDGE EMISSION IN ZnO. Tomzig, E.,Helbig, R. Journal of Luminescence . 1976Tomzig E. & Helbig R. (1976). Band-edge emission in ZnO. J. Lumin. 14, pp. 403-415.E. Tomzig, H. Helbig, “Band-edge emission in ZnO”,J. Lumin 14 (1976) 403. :...
Spectrum Emission Mask 为频谱发射模板，即：带外杂散，指落在通信载波之外的⼲扰杂散，属于⽆⽤发射（不包括杂散发射），需要进⾏严格限制，否则会对其他⽤户的系统造成严重⼲扰，通常由信号调制过程或发射机的⾮线性失真产⽣。该测试的⽬的是验证发射信号在QPSK （Quadrature Phase Shift Keying,正交...
Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires. Appl. Phys. A: Mater. Sci. Process. 2010, 100, 165-170.Zhao, Q.; Cai, T.; Wang, S.; Zhu, R.; Liao, Z.; Yu, D. Enhanced near-band-edge emission and field emission properties from ...
网络近能隙边缘发光峰 网络释义 1. 近能隙边缘发光峰 当Zn1-xMgxO奈米柱镁含量升高时,其近能隙边缘发光峰(near-band-edge emission)会有蓝位移的现象发生,由变温PL分析可 …etdncku.lib.ncku.edu.tw|基于4个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
Band-edge emission from GaN nanopowders is strongly enhanced by the deposition of Au nanoparticles. This enhancement in photoluminescence emission results from resonant absorption of the defect-related emission caused by the localized surface plasmons in the Au nanoparticles and subsequent charge transfer ...
The deepest emission (e,A 0 ) follows the calculated shift of the hh band-edge, although manifestation of hh character is unexpected under the conditions of tensile biaxial strain. For the shallower excitonic emissions, the strain-induced lh shift is comparable to their smaller binding energy ...
Out of band emissions. The power of any emission outside of the authorized operating frequency ...
www.nature.com/scientificreports OPEN received: 11 February 2015 accepted: 01 May 2015 Published: 01 June 2015 Effect of N2 and H2 plasma treatments on band edge emission of ZnO microrods Joana Rodrigues1, Tiago Holz1, Rabie Fath Allah2, David Gonzalez2, Teresa Ben2, Maria R...
The Yb3+ has typical PL emission at around 980 nm, but the Yb PL is very weak. After increasing the annealing temperature to 900 °C, the NBE PL has increased much and is the dominant emission in the spectrum. After 1000 °C annealing, the NBE PL has increased significantly, and the ...