near-band-edge-emission网络近能隙边缘发光峰 网络释义 1. 近能隙边缘发光峰 当Zn1-xMgxO奈米柱镁含量升高时,其近能隙边缘发光峰(near-band-edge emission)会有蓝位移的现象发生,由变温PL分析可 …etdncku.lib.ncku.edu.tw|基于4个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
Near Band Edge Emission of Mbe Grown ZnO Epilayers: Identification of Donor Impurities and O2 Annealing Effects. C. Morhain,M. Teisseire-Doninelli,S. Vezian,C. Deparis,P. Lorenzini,F. Raymond,J. Guion,G. Neu. Physica Status Solidi B Basic Research . 2004...
Near-band-edge emission in photoluminescence of ZnO nanowires was found to be significantly improved after plasma treatment. The ratio of ultraviolet emission peak intensity before and after plasma treatment is as high as 3.5. Field emission properties were considerably enhanced after plasma treatment ...
1. Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O-2 annealing effects [J] . Morhain C., Teisseire-Doninelli M., Vezian S., Physica status solidi, B. Basic research . 2004,第3期 机译:MBE生长的ZnO外延层的近带边缘发射:鉴...
The deepest emission (e,A 0 ) follows the calculated shift of the hh band-edge, although manifestation of hh character is unexpected under the conditions of tensile biaxial strain. For the shallower excitonic emissions, the strain-induced lh shift is comparable to their smaller binding energy ...
1. 禁带边 带边光吸收,absorption... ... ) band-edge emission 带边发射 )near-band-edge禁带边) region with boundary 带边区域 ... www.dictall.com|基于 1 个网页 2. 近能带边缘 当TMIn 流率最大(450sccm) 时, YL 相对於近能带边缘(near-band-edge) 谱峰 Inbe的萤光强度由未掺杂铟时的130...
Thin films of nickel-doped zinc oxide (Zn1-NiO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1-NiO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV as the...
This is a slightly higher energy than the UV NBE peak and results in strong UV emission in all samples. For this case, there is no PL in the visible region as can be seen in Fig. 7(b). This demonstrates that there is no efficient energy transfer from near band edge excitation to ...
Thin films of nickel-doped zinc oxide (Zn1−xNixO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1−xNixO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV...
PL spectra taken from theAlxGa1−xNepitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients ...