near-band-edge 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 近带边 翻译结果2复制译文编辑译文朗读译文返回顶部...
1. 禁带边 带边光吸收,absorption... ... ) band-edge emission 带边发射 )near-band-edge禁带边) region with boundary 带边区域 ... www.dictall.com|基于 1 个网页 2. 近能带边缘 当TMIn 流率最大(450sccm) 时, YL 相对於近能带边缘(near-band-edge) 谱峰 Inbe的萤光强度由未掺杂铟时的130...
求翻译:near-band-edge是什么意思?待解决 悬赏分:1 - 离问题结束还有 near-band-edge问题补充:匿名 2013-05-23 12:21:38 近带边 匿名 2013-05-23 12:23:18 不久带内边缘 匿名 2013-05-23 12:24:58 近带边缘 匿名 2013-05-23 12:26:38 带边缘附近 匿名 2013-05-23 12:28:18 ...
We report, for the first time, on the strain related features of the near band-edge luminescence of ZnS epilayers and find emissions that can be related to both heavy-hole (hh) and light-hole (lh) character. Layers with different relative strain show well resolved peaks due to the ...
near-band-edge-emission网络近能隙边缘发光峰 网络释义 1. 近能隙边缘发光峰 当Zn1-xMgxO奈米柱镁含量升高时,其近能隙边缘发光峰(near-band-edge emission)会有蓝位移的现象发生,由变温PL分析可 …etdncku.lib.ncku.edu.tw|基于4个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires. Appl. Phys. A: Mater. Sci. Process. 2010, 100, 165-170.Zhao, Q.; Cai, T.; Wang, S.; Zhu, R.; Liao, Z.; Yu, D. Enhanced near-band-edge emission and field emission properties from ...
We studied the near-band-edge optical responses of solution-processed CH<SUB>3</SUB>NH<SUB>3</SUB>PbI<SUB>3</SUB> on mesoporous TiO<SUB>2</SUB> electrodes, which is utilized in mesoscopic heterojunction solar cells. Photoluminescence (PL) and PL excitation spectra peaks appear at 1.60 and...
Photoluminescence spectra in Sb 2S 3 have been investigated for the first time. The photoluminescence composed of many peaks is observed near the indirect fundamental gap at 2 K. From the study of sample, excitation intensity and temperature dependences of photoluminescence and the time decay spectra...
We report, for the first time, on the strain related features of the near band-edge luminescence of ZnS epilayers and find emissions that can be related to both heavy-hole (hh) and light-hole (lh) character. Layers with different relative strain show well resolved peaks due to the recombin...
Intensity variations in the near-band-edge recombination of GaP epitaxial layers, grown on (111) and (001) oriented substrates, as observed by cathodoluminescence imagingIntensity variations in the near-band-edge recombination of GaP epitaxial layers, grown on (111) and (001) oriented substrates, ...