aP。R。 P.R.[translate] aYou can cancel this operation by using Undo.[translate] a我将提交申请在系统中。 I will submit the application in the system.[translate] a为了确定时间 In order to definite time[translate] anear-band-edge 近带边缘[translate]...
1. 禁带边 带边光吸收,absorption... ... ) band-edge emission 带边发射 )near-band-edge禁带边) region with boundary 带边区域 ... www.dictall.com|基于 1 个网页 2. 近能带边缘 当TMIn 流率最大(450sccm) 时, YL 相对於近能带边缘(near-band-edge) 谱峰 Inbe的萤光强度由未掺杂铟时的130...
求翻译:near-band-edge是什么意思?待解决 悬赏分:1 - 离问题结束还有 near-band-edge问题补充:匿名 2013-05-23 12:21:38 近带边 匿名 2013-05-23 12:23:18 不久带内边缘 匿名 2013-05-23 12:24:58 近带边缘 匿名 2013-05-23 12:26:38 带边缘附近 匿名 2013-05-23 12:28:18 ...
The deepest emission (e,A 0 ) follows the calculated shift of the hh band-edge, although manifestation of hh character is unexpected under the conditions of tensile biaxial strain. For the shallower excitonic emissions, the strain-induced lh shift is comparable to their smaller binding energy ...
near-band-edge-emission网络近能隙边缘发光峰 网络释义 1. 近能隙边缘发光峰 当Zn1-xMgxO奈米柱镁含量升高时,其近能隙边缘发光峰(near-band-edge emission)会有蓝位移的现象发生,由变温PL分析可 …etdncku.lib.ncku.edu.tw|基于4个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
PL spectra taken from theAlxGa1−xNepitaxial films are dominated by strong near-band-edge luminescence emissions. The emission lines were found to shift linearly towards higher energy with increasing pressure. By examining the pressure dependence of the spectral features, the pressure coefficients ...
We report, for the first time, on the strain related features of the near band-edge luminescence of ZnS epilayers and find emissions that can be related to both heavy-hole (hh) and light-hole (lh) character. Layers with different relative strain show well resolved peaks due to the recombin...
After electrons being excited into conduction band of ZnO nanocrystals, the relaxation of the electrons could pass through (1) near band edge radiative recombination, NBE PL, including phonon effects and free and bound excitons; (2) be trapped or recombine in defect related energy levels, (3) ...
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in ...
Localization of light is the photon analog of electron localization in disordered lattices, for whose discovery Anderson received the Nobel prize in 1977. The question about its existence in open three-dimensional materials has eluded an experimental and