SI2302 A2SHB 2302P/E富满SOT-23电流2.3A 3A场效应管N沟道MOSFET 深圳市东方世纪电子有限公司15年 月均发货速度:当日 广东 深圳市福田区 ¥5.50成交8360PCS 原装现货IPA60R190P6 N沟道600V 20.2A封装TO-220-3场效应管MOS 深圳市泰盛兴科技有限公司10年 ...
1)电性能测试 对电路进行排查,结果显示失效样品的器件Q2引脚信号出现异常,该器件为N-Channel MOSFET,具体表现为:NG样品Q2的D极电位正常,但是对G极的反馈信号无动作。Q2不能正常工作致使电源电路的DC3.3V输出下降,该输出达不到设计要求,将会直接导致系统出现不能正常开机。 图1 正常样品与失效样品Q2 pin脚信号对比 ...
SI2306 丝印A6SHB SOT-23场效应管N沟道MOSFET 全新现货 深圳市东方世纪电子有限公司15年 月均发货速度:暂无记录 广东 深圳市福田区 ¥3.50成交31865个 HY4008W TO-247 80V200A 2.9mΩ N沟道 场效应管 MOS管华羿微 深圳市铂嘉半导体有限公司9年
X• T ELECTRONICS XT10R0N03B PDFN5x6 Product Summary 产品概述 VDS 30V ID 40A RDSON (Typ@10V) 6.0mΩ RDSON(Typ@4.5V) 9.5mΩ Pin Definition 脚位定义 N沟道30V/40A功率MOS管 30V/40A N Channel Advanced Power MOSFET Features特征 Very Low Rds(on)极低的导通电阻 Low Gate Charge...
www.vishay.com SiE818DF Vishay Siliconix N-Channel 75 V (D-S) MOSFET GS D 98 10 D S6 7 D GS D 23 1 Top View PolarPAK® 23 1 5 4 DG S D S5 4 98 10 D 7 Bottom View Top surface is connected to pins 1, 5, 6, and 10 PRODUCT SUMMARY VDS (V) RDS(on) max. ()...
SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.038 at VGS = 10 V 0.042 at VGS = 6 V ID (A) 40 38 TO-263 FEATURES • TrenchFET® Power MOSFETs • 175 °C Junction Temperature • New Low Thermal Resistance...
ON Semiconductor SC-88型号N-Channel双晶体管MOSFET数据手册说明书 © Semiconductor Components Industries, LLC, 2015 May, 2019− Rev. 71Publication Order Number:NTJD4001N/D NTJD4001N, NVTJD4001N MOSFET – Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features •Low Gate Charge for...
Learn more about our 500 V - 950 V CoolMOS™ N-channel MOSFET portfolio – innovative MOSFET transistors for a variety of applications The CoolMOS™ N-Channel MOSFET product range targets a broad range of applications from low power ...
40V 175℃ N-CHANNEL 增强模式 MOSFET 商品说明书 DMTH4004LK3 Document number: DS37792 Rev. 2 - 2 1 of 7 www.diodes.com December 2015 © Diodes Incorporated 40V 175°Product Summary Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain...
MOSFET - N-Channel, DUAL COOL) 88, POWERTRENCH) 100 V, 162 A, 2.95 mW FDMT800100DC General Description This N−Channel MOSFET is produced using onsemi's advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS...