A MOSFET having a buried channel structure and an adjacent surface channel structure between a source region and a drain region. The surface channel structure is preferably formed adjacent the source region via angular implantation techniques. By combining the advantages of the surface channel device ...
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A BURIED-CHANNEL MOSFET AND A SURFACE-CHANNEL MOSFET OF A SAME TYPE AND FABRICATION METHOD THEREOF 有效下载PDF 基本信息 申请人信息 代理人信息 摘要 法律状态 权利要求 说明书 基本信息 申请号 EP16207183 申请日 2016-12-28 授权公告号 EP3188226A1 授权公告日 - 优先权号 - 优先权日 - 分类号 H01...
2) buried-channel PMOSFET 埋沟P型金属-氧化物-半导体场效应晶体管3) trench MOSFET(TMOS) 沟槽金属氧化物半导体场效应晶体管4) pmos transistor p 沟道金属氧化物半导体晶体管 例句>> 5) SiGe-channel SOI CMOS 锗-硅沟道SOI互补金属-氧化物-半导体...
专利名称：Buried-channel MOSFET and a surface- channel MOSFET of a same type and fabrication method thereof 发明人：Tzu Yin Chiu,Clifford Ian Drowley,Leong Tee Koh,Yu Lei Jiang,Da Qiang Yu 申请号：US15394592 申请日：20161229 公开号：US10062704B2 公开日：20180828 专利内容由知识产权出版社提供 ...
Channel length scaling of 1/f noise in 0.18 μm technology MDD n-MOSFETs Low-frequency (LF) noise (1 Hz-100 KHz) measurements have been performed on 12 n-channel MOSFETs with 5 um width and 0.23-10 um varying lengths. The MOSFET... Z Celik-Butler,P Vasina 被引量: 0发表: 0年 Fea...
A new buried channel PMOSFET structure by forming P+ poly-Si sidewall spacers next to the main N+ poly-Si gate electrode is proposed and developed for deep submicron applications. By using this new device structure, the current drivability of a 0.3μm PMOSFET is increased by about 40%. ...
Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor漏致势垒降低效应对短沟道... 结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依...
1. Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET; C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度2) buried-channel 隐埋沟道 1. The I-V characteristics for SiC buried-channel MOSFETs based on an average mobility model is presented. 提出了一种SiC隐埋...
A high speed buried channel MOSFET isolated by an implanted silicon dioxide layer K. Ohwada,Y. Omura,E. Sano - International Electron Devices Meeting - 1980 - 被引量: 25 Technique for forming electric field shielding layer in oxygen- implanted silicon substrate Richard W. Griffith - US - 1988...