Buried-channel MOSFET model for SPICE. Van der Tol,J Michael,S.G.Chamberlain. IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems . 1991M. J. Van der To1 and S . G . Chamberlain, "Buried-channel MOS- FET model for SPICE," Trans. Computer-Aided Des., vol. ...
1) buried-channel 隐埋沟道1. The I-V characteristics for SiC buried-channel MOSFETs based on an average mobility model is presented. 提出了一种SiC隐埋沟道MOSFET平均迁移率模型,并在此基础上对器件I-V特性进行了研究。2. The effects of several factors on mobility in 4H-SiC buried-channel (BC...
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在p型衬底上扩散两个n 型区,分别是漏极和源极。中间部分是金属-绝缘体-半导体组成的MOS电容结构,绝缘层上的金属电极称为栅极。栅极上不加电压时,源和漏极之间由其周围的结绝缘着,故不通导。当栅极加上电压,栅下氧化层中产生电场,其电力线由栅电极指向半导体表面,外加电压将在半导体表面产生表面感应电荷。随着...
专利名称：Buried-channel MOSFET and a surface- channel MOSFET of a same type and fabrication method thereof 发明人：Tzu Yin Chiu,Clifford Ian Drowley,Leong Tee Koh,Yu Lei Jiang,Da Qiang Yu 申请号：US15394592 申请日：20161229 公开号：US10062704B2 公开日：20180828 专利内容由知识产权出版社提供 ...
Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor漏致势垒降低效应对短沟道... 结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依...
Simple expressions of threshold and subthreshold characteristics for a very small buried-channel MOSFET is derived from a model of majority-carrier distribution along the channel. The carrier distribution is determined from the Poisson equation for a high-low junction. The basic formula for the subthre...
B. Chakrabarti, "Estimation of hole mobility in strained Si1-xGex buried channel heterostructure PMOSFET," Solid State Electron., vol. 45, no. 5, pp. 669-676, May 2001.G. S. Kar, S. K. Ray, T. Kim, S. K. Banerjee, and N. B. Chakrabarti, \Es- timation of hole mobility ...
7. The circuit of claim 1, wherein the enhancement mode FET is a buried channel MOSFET. 8. The circuit of claim 1, wherein the depletion mode FET is a buried channel MOSFET. 9. The circuit of claim 1, wherein the circuit is an inverter. 10. The circuit of claim 1, wherein...
2) buried channel transistor 埋沟晶体管3) buried-channel PMOSFET 埋沟P型金属-氧化物-半导体场效应晶体管4) Si N channel power field effect transistor 硅N沟场效应晶体管5) P-channel FET P沟道场效应晶体管6) fet channel 场效应晶体管沟道...