MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using onsemi's advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have ...
MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359AN General Description This N−Channel Logic Level MOSFET is produced using onsemi's advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These ...
A type of MOSFET in which the MOSFET channel is composed of a majority of charge carriers as current carriers like electrons is known as N channel MOSFET. Once this MOSFET is ON, then the majority of charge carriers will move throughout the channel. This MOSFET is a contrast to P-Channel...
N-Channel 25-V (D-S) MOSFET SiR412DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V PowerPAK SO-8 ID (A)a, g 20 20 Qg (Typ.) 4.9 nC 6.15 mm S 1S 5.15 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering ...
FDS8870_GFAIRCHILD09+TO-25230V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel FDS8449FAIRCHILD09+SOP-840V的N沟道的PowerTrench MOSFET 型号厂商批号封装说明 A309560C7WAmphenol Energy Technologies24+连接器309 Connector,3P+N+E / 5W - 60A - Connector - ...
阳州阳杰电子科技有限公司N-Channel增强模式字段效应管数据手册说明书 YJSD12N03A 1 / 7 Yangzhou Yangjie Electronic Technology Co., Ltd.S-E606 Rev.3.1,14-Oct-20 www.21yangjie.com N-Channel Enhancement Mode Field Effect Transistor Product Summary ● V DS 30V ● I D 12A ● R DS(...
N-Channel 100 V (D-S) MOSFET SiR870ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.0066 at VGS = 10 V 0.0070 at VGS = 7.5 V 0.0105 at VGS = 4.5 V ID (A)a 60 60 60 Qg (Typ.) 25.5 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and ...
N-channel MOSFET with under-voltage protection. -±1% Over Line Voltage and Temperature The APW7067N provides excellent regulation for output load variation. An internal 0.8V temperature-compensated reference voltage is designed to meet the requirement of low output voltage applications. The sw...
2 Applications • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications 3 Description The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications. ...
SON 5mm x 6mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems • Optimized for Control FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications....