A 2-deck structure (88L+88L) has been used for the vertical NAND string integration with the other players only except Intel (3-deck structure for 144L FG CuA). For Samsung, 512Gb 176L TLC chip will be the 1stgeneration of Cell-on-Periphery, COP (CuA), TCAT V7 ...
▲SK Hynix H25T3TCG8CX590是 SK Hynix v7 4D NAND，176-layer堆叠TLC，速度是1600 MT/s。每颗...
NAND:SK Hynix H25T3TCG8CX590 x2 ▲SK Hynix H25T3TCG8CX590是 SK Hynix v7 4D NAND,176-layer堆叠TLC,速度是1600 MT/s。每颗NAND由2个chip组成,每个chip由8个512Gb的Die组成,所以一颗NAND由16Die堆叠而成,每Die接驳一个CE,共计16CE。 两颗NAND正好32Die接驳32CE,正好塞满Aries的32CE上线,准确来说S...
3、颗粒虽然采用了SK Hynix 4D V7 176Layer颗粒,但并未在Platinum P41 2T上发挥出较高的水准;同时笔者认为此次海力士Platinum P41采用的4D V7 176Layer颗粒写入性能跟三星的980 Pro采用的3D V6 136Layer颗粒并没有拉开较大的差距; 4、实际测试过程中Platinum P41 2T主控以及颗粒发热较高,性能释放较为激进,日常...
笔者查询相关资料后得知P41 OEM盘PC801 1T的TLC 颗粒直写速度也在2200MB/s左右,故在此对Platinum P41 2T的颗粒用料做个判断:Wafer采用了512Gb/Die的4D V7 176Layer的颗粒,共计32Die,其中每一个Die接驳一个CE,共计32CE,吃满了Platinum P41主控ARIES白羊座32CE的带宽。 无谓丶shunny 配角甲 9 (7)测试...
Table 1. A comparison of upcoming new 3D TLC NAND chips; Samsung 176L and 238L, SK Hynix 176L, KIOXIA/WD 162L (source: ISSCC2021, ISSCC2022) How to increase the storage capacity of the 3D NAND in the future? Although the industry has moved beyond 128-stacked WL structure with CuA ...
A 2-deck structure (88L+88L) has been used for the vertical NAND string integration with the other players only except Intel (3-deck structure for 144L FG CuA). For Samsung, 512Gb 176L TLC chip will be the 1st generation of Cell-on-Periphery, COP (CuA), TCAT V7 V-NAND, and ...