Again, Micron revealed a 176L CTF CuA 3D NAND chip with 195T for 512Gb TLC first. Bit density reached 10.273 Gb/mm2for 512Gb TLC die by substantially shrinking the die size compared with the previous 128L 512Gb TLC die (7.755 Gb/mm2). A 2-deck structure (88L+88L...
NAND:SK Hynix H25T3TCG8CX590 x2 ▲SK Hynix H25T3TCG8CX590是 SK Hynix v7 4D NAND,176-layer堆叠TLC,速度是1600 MT/s。每颗NAND由2个chip组成,每个chip由8个512Gb的Die组成,所以一颗NAND由16Die堆叠而成,每Die接驳一个CE,共计16CE。 两颗NAND正好32Die接驳32CE,正好塞满Aries的32CE上线,准确来说S...