512Gb 176L TLC chip will be the 1stgeneration of Cell-on-Periphery, COP (CuA), TCAT V7 V-NAND, and the following 1Tb 238L TLC products would be the 2ndgeneration COP TCAT V8 V-NAND. Although
比较接近现如今的国产入门联芸MAP1202APCI-E 3.0主控。 颗粒是海力士最新的3D V7 TLC颗粒。最强颗粒搭配其他牌子的主控,就能看出颗粒的性能了。 测试 测试项目: CrystalDiskMark 5.0.3 16G ASSSD 2.0.6821.41776 5G TX-bench下空盘状态对比85%满盘 95%顺序读取(写入)/5%随机写入(读取)(模拟系统盘下读写大型数据...
▲SK Hynix H25T3TCG8CX590是 SK Hynix v7 4D NAND，176-layer堆叠TLC，速度是1600 MT/s。每颗...
NAND:SK Hynix H25T3TCG8CX590 x2 ▲SK Hynix H25T3TCG8CX590是 SK Hynix v7 4D NAND,176-layer堆叠TLC,速度是1600 MT/s。每颗NAND由2个chip组成,每个chip由8个512Gb的Die组成,所以一颗NAND由16Die堆叠而成,每Die接驳一个CE,共计16CE。 两颗NAND正好32Die接驳32CE,正好塞满Aries的32CE上线,准确来说S...
3、颗粒虽然采用了SK Hynix 4D V7 176Layer颗粒,但并未在Platinum P41 2T上发挥出较高的水准;同时笔者认为此次海力士Platinum P41采用的4D V7 176Layer颗粒写入性能跟三星的980 Pro采用的3D V6 136Layer颗粒并没有拉开较大的差距; 4、实际测试过程中Platinum P41 2T主控以及颗粒发热较高,性能释放较为激进,日常...
笔者查询相关资料后得知P41 OEM盘PC801 1T的TLC 颗粒直写速度也在2200MB/s左右,故在此对Platinum P41 2T的颗粒用料做个判断:Wafer采用了512Gb/Die的4D V7 176Layer的颗粒,共计32Die,其中每一个Die接驳一个CE,共计32CE,吃满了Platinum P41主控ARIES白羊座32CE的带宽。 无谓丶shunny 配角甲 9 (7)测试...
Samsung will keep the 2-deck structure even for the 238L, which is one of Samsung’s strengths in 3D NAND technology. The 162L BiCS6 3D NAND will be the 1stproduct with the CuA concept from KIOXIA/WD. Table 1. A comparison of upcoming new 3D TLC NAND chips; Samsung 176L and 238...
The 162L/176L TLC chips have 512Gb or 1Tb memory capacity with TLC or QLC operation for UFS (mobile) or cSSD/eSSD products (ex. SK hynix Platinum P41 PCIe NVMe Gen4 SSD).Micron revealed the 176L 3D NAND products ahead of other players last year, while other players seem to be ...