In this work, we have investigated the wet etching of MOCVD grown HfO 2 film using diluted HF. The effect of various implant species on the etch rate was also extensively studied. Etch depth profile for as-deposited film shows that etch rate is higher at the surface and near the interface...
(obdtfhf)ObeHy2.f SiO2 Graphene ZnO HfO2 SiO2 Graphene HfO2 Thickness (nm) – 0.3 3.7 14.0 – 0.3 18.8 Density (g/cm3) 2.7 2.2 4.6 9.6 2.5 2.1 9.6 Roughness (nm) – 2.50 0.76 0.88 – 0.81 0.88 Table 2. Density, thickness, and roughness values extracted from the XRR measurements...
Then, the substrates were subjected to etch in a solution of HF-H2O in the ratio of 1:10 for 3 m to remove native oxides and terminate the surface dangling bonds with H atoms that causes surface passivation effect. The samples were finally dried by N2 gun.10 nm HfO2 films were ...
When using the 49% HF solution to etch the HfO2-containing dielectric, a SiO2 layer, such as a shallow trench isolation (STI) layer, will be also removed. Furthermore, the etching rate of the SiO2 layer is much higher than that of the HfO2-containing dielectric, and the SiO2 layer will...
The rate law determined experimentally, i.e., Retch(/h)=1,07x10[H2]1/2, is consistent with a reaction mechanism that involves the formation of a volatile hafnium dihydroxide, Hf(OH)2 in two successive elementary steps. Precise control of the etching conditions allows to reach atomically ...
X-ray reflectivity analysis confirmed the linear removal of HfO2 and measured an HfO2 ALEt etch rate of 0.11 angstrom/cycle at 200 degrees C. Fourier transform infrared (FTIR) spectroscopy measurements also observed HfO2 ALEt using the infrared absorbance of the Hf-O stretching vibration. FTIR ...
ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room ...
Among few chemistries proposed to etch the HIK-layer, the HF based solutions are the preferred candidates [3, 4]. We are reporting here our approach to develop a HF solution highly selective towards a SiO2 layer. This has been done based on identification and control of the active species ...
TohfeTSiiN-t/iTpis/tHrufOct2u/rCeoinSia2/sSqiutairpe devices. Devices were processed in a standard 0.25 μm CMOS pattern (with tip-tip distance of 1.41 μm) were fabricated using modern advanced lithography on a p+-doped (Boron) Si wafer. The fabrication details ...
However, the etch process has to minimize the deposition rate of boron polymers on silicon surfaces in order to prevent the formation of HfO 2 residues. The anisotropic profile of the gate is maintained during the BCl 3 plasma step. The c鈥揝i surface presents no contamination (Hf or B) ...